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Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux. / Dmitriev, D. V.; Kolosovsky, D. A.; Fedosenko, E. V. и др.

в: Semiconductors, Том 55, № 11, 11.2021, стр. 823-827.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Dmitriev, DV, Kolosovsky, DA, Fedosenko, EV, Toropov, AI & Zhuravlev, KS 2021, 'Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux', Semiconductors, Том. 55, № 11, стр. 823-827. https://doi.org/10.1134/S1063782621100080

APA

Dmitriev, D. V., Kolosovsky, D. A., Fedosenko, E. V., Toropov, A. I., & Zhuravlev, K. S. (2021). Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux. Semiconductors, 55(11), 823-827. https://doi.org/10.1134/S1063782621100080

Vancouver

Dmitriev DV, Kolosovsky DA, Fedosenko EV, Toropov AI, Zhuravlev KS. Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux. Semiconductors. 2021 нояб.;55(11):823-827. doi: 10.1134/S1063782621100080

Author

Dmitriev, D. V. ; Kolosovsky, D. A. ; Fedosenko, E. V. и др. / Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux. в: Semiconductors. 2021 ; Том 55, № 11. стр. 823-827.

BibTeX

@article{38ede6c79d144fb4ab1648378b79d3ca,
title = "Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux",
abstract = "Changes in the structure and elemental composition of the surface of the epitaxy-ready InP(001) substrate in an As flux in ultrahigh vacuum are studied in situ by the reflection high-energy electron diffraction (RHEED) technique. It is shown that, during annealing of the oxide layer at the surface, an InP1 –xAsx layer is formed as a result of the substitution of phosphorus by arsenic. The dependence of the degree of substitution on the annealing temperature and time is established. The degree of the substitution of phosphorus by arsenic in the surface layer is 7% at the annealing temperature 480°C and, reaches 41% at the temperature 540°C. The annealing time influences the degree of substitution only slightly.",
keywords = "annealing, arsenic, diffraction, indium phosphide, substitution",
author = "Dmitriev, {D. V.} and Kolosovsky, {D. A.} and Fedosenko, {E. V.} and Toropov, {A. I.} and Zhuravlev, {K. S.}",
note = "Funding Information: The study was supported by the Russian Foundation for Basic Research and the government of the Novosibirsk region, project no. 20-42-540009. Publisher Copyright: {\textcopyright} 2021, Pleiades Publishing, Ltd.",
year = "2021",
month = nov,
doi = "10.1134/S1063782621100080",
language = "English",
volume = "55",
pages = "823--827",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "11",

}

RIS

TY - JOUR

T1 - Substitution of Phosphorus at the InP(001) Surface Upon Annealing in an Arsenic Flux

AU - Dmitriev, D. V.

AU - Kolosovsky, D. A.

AU - Fedosenko, E. V.

AU - Toropov, A. I.

AU - Zhuravlev, K. S.

N1 - Funding Information: The study was supported by the Russian Foundation for Basic Research and the government of the Novosibirsk region, project no. 20-42-540009. Publisher Copyright: © 2021, Pleiades Publishing, Ltd.

PY - 2021/11

Y1 - 2021/11

N2 - Changes in the structure and elemental composition of the surface of the epitaxy-ready InP(001) substrate in an As flux in ultrahigh vacuum are studied in situ by the reflection high-energy electron diffraction (RHEED) technique. It is shown that, during annealing of the oxide layer at the surface, an InP1 –xAsx layer is formed as a result of the substitution of phosphorus by arsenic. The dependence of the degree of substitution on the annealing temperature and time is established. The degree of the substitution of phosphorus by arsenic in the surface layer is 7% at the annealing temperature 480°C and, reaches 41% at the temperature 540°C. The annealing time influences the degree of substitution only slightly.

AB - Changes in the structure and elemental composition of the surface of the epitaxy-ready InP(001) substrate in an As flux in ultrahigh vacuum are studied in situ by the reflection high-energy electron diffraction (RHEED) technique. It is shown that, during annealing of the oxide layer at the surface, an InP1 –xAsx layer is formed as a result of the substitution of phosphorus by arsenic. The dependence of the degree of substitution on the annealing temperature and time is established. The degree of the substitution of phosphorus by arsenic in the surface layer is 7% at the annealing temperature 480°C and, reaches 41% at the temperature 540°C. The annealing time influences the degree of substitution only slightly.

KW - annealing

KW - arsenic

KW - diffraction

KW - indium phosphide

KW - substitution

UR - http://www.scopus.com/inward/record.url?scp=85124725388&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/0451b654-5bde-34fc-9d49-dc7558400979/

U2 - 10.1134/S1063782621100080

DO - 10.1134/S1063782621100080

M3 - Article

AN - SCOPUS:85124725388

VL - 55

SP - 823

EP - 827

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 11

ER -

ID: 35550921