Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
Silicon oxides and silicon nitrides : Structure, properties and applications in memristors. / Volodin, V. A.; Kamaev, G. N.; Kruchinin, V. N. et al.
International Conference on Micro- and Nano-Electronics 2018. ed. / Vladimir F. Lukichev; Konstantin V. Rudenko. Vol. 11022 SPIE, 2019. 1102212 (Proceedings of SPIE; Vol. 11022).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
}
TY - GEN
T1 - Silicon oxides and silicon nitrides
T2 - International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018
AU - Volodin, V. A.
AU - Kamaev, G. N.
AU - Kruchinin, V. N.
AU - Gritsenko, V. A.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The capacity of memory matrices grows exponentially, but in many approaches the degree of integration of memory elements already reaches physical limits, which stimulates research into the development of new physical principles and new materials for memory elements. Memristors are very promising elements of memory. The memristors are the basis for high-speed, non-volatile, radiation-resistant flash memory matrices of the new generation. The SiO x (0.32 targets and deposition in high vacuum; 2) plasma enhanced chemical vapor deposition (PECVD). The SiN x (0.5x (x<1.1) contain amorphous Si clusters, high temperature annealings lead to crystallization of the clusters and forming of Si nanocrystals in such films. As for SiOx films, amorphous Si clusters were observed in asdeposited films with x≤1. These data were confirmed from analysis of ellipsometry data. The current-voltage (I-V) characteristics of the films were studied. Effects of switching from high resistance state (HRS) to low resistance state (LRS) were observed for SiO x based films. These switching can be used in memristors.
AB - The capacity of memory matrices grows exponentially, but in many approaches the degree of integration of memory elements already reaches physical limits, which stimulates research into the development of new physical principles and new materials for memory elements. Memristors are very promising elements of memory. The memristors are the basis for high-speed, non-volatile, radiation-resistant flash memory matrices of the new generation. The SiO x (0.32 targets and deposition in high vacuum; 2) plasma enhanced chemical vapor deposition (PECVD). The SiN x (0.5x (x<1.1) contain amorphous Si clusters, high temperature annealings lead to crystallization of the clusters and forming of Si nanocrystals in such films. As for SiOx films, amorphous Si clusters were observed in asdeposited films with x≤1. These data were confirmed from analysis of ellipsometry data. The current-voltage (I-V) characteristics of the films were studied. Effects of switching from high resistance state (HRS) to low resistance state (LRS) were observed for SiO x based films. These switching can be used in memristors.
KW - memristors
KW - random bonding model
KW - random mixture model
KW - silicon nitride
KW - silicon oxide
UR - http://www.scopus.com/inward/record.url?scp=85063472862&partnerID=8YFLogxK
U2 - 10.1117/12.2521759
DO - 10.1117/12.2521759
M3 - Conference contribution
AN - SCOPUS:85063472862
VL - 11022
T3 - Proceedings of SPIE
BT - International Conference on Micro- and Nano-Electronics 2018
A2 - Lukichev, Vladimir F.
A2 - Rudenko, Konstantin V.
PB - SPIE
Y2 - 1 October 2018 through 5 October 2018
ER -
ID: 19039057