Research output: Contribution to journal › Article › peer-review
Raman scattering studies of low energy Ar+ ion implanted monocrystalline silicon for synchrotron applications. / Kumar, N.; Volodin, V. A.; Goryainov, S. V. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 534, 01.01.2023, p. 97-102.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Raman scattering studies of low energy Ar+ ion implanted monocrystalline silicon for synchrotron applications
AU - Kumar, N.
AU - Volodin, V. A.
AU - Goryainov, S. V.
AU - Chernyshev, A. K.
AU - Kozakov, A. T.
AU - Scrjabin, A. A.
AU - Chkhalo, N. I.
AU - Mikhailenko, M. S.
AU - Pestov, A. E.
AU - Zorina, M. V.
N1 - Funding Information: The study was supported by the Ministry of Science and Higher Education of the Russian Federation, project No. FWGW-2022-0011. The work was also carried out within the framework of State Program No. 0030-2021-0022. Publisher Copyright: © 2022 Elsevier B.V.
PY - 2023/1/1
Y1 - 2023/1/1
N2 - The surface and subsurface of the Ar+ ion implanted monocrystalline silicon was modified due to the exchange of energy and momentum of ions. This procedure is necessary for shape homogeneity of monocrystalline silicon surface useful in synchrotron application. The implantation has modified the vibrational modes of monocrystalline silicon investigated by Raman spectroscopy using polarized and unpolarized inelastically scattered light. An additional pronounced shift of peak position and broadening of the linewidth of optical phonon mode at lower frequency was observed in Ar+ ion implanted monocrystalline silicon. The shift and broadening of such peak was originated from the amorphous and nanocrystalline silicon. The maximum depth of such transformation was equal to the depth of Ar+ ion implantation with energies of 400 eV which was about 2 nm studied by ion profiling method. This was also confirmed by maximum depth of penetration of ultraviolet laser in monocrystalline silicon.
AB - The surface and subsurface of the Ar+ ion implanted monocrystalline silicon was modified due to the exchange of energy and momentum of ions. This procedure is necessary for shape homogeneity of monocrystalline silicon surface useful in synchrotron application. The implantation has modified the vibrational modes of monocrystalline silicon investigated by Raman spectroscopy using polarized and unpolarized inelastically scattered light. An additional pronounced shift of peak position and broadening of the linewidth of optical phonon mode at lower frequency was observed in Ar+ ion implanted monocrystalline silicon. The shift and broadening of such peak was originated from the amorphous and nanocrystalline silicon. The maximum depth of such transformation was equal to the depth of Ar+ ion implantation with energies of 400 eV which was about 2 nm studied by ion profiling method. This was also confirmed by maximum depth of penetration of ultraviolet laser in monocrystalline silicon.
KW - Ar ion implantation
KW - Monocrystalline silicon
KW - Raman spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=85142879994&partnerID=8YFLogxK
U2 - 10.1016/j.nimb.2022.11.016
DO - 10.1016/j.nimb.2022.11.016
M3 - Article
AN - SCOPUS:85142879994
VL - 534
SP - 97
EP - 102
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
ER -
ID: 40100218