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Raman scattering studies of low energy Ar+ ion implanted monocrystalline silicon for synchrotron applications. / Kumar, N.; Volodin, V. A.; Goryainov, S. V. и др.

в: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Том 534, 01.01.2023, стр. 97-102.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Kumar, N, Volodin, VA, Goryainov, SV, Chernyshev, AK, Kozakov, AT, Scrjabin, AA, Chkhalo, NI, Mikhailenko, MS, Pestov, AE & Zorina, MV 2023, 'Raman scattering studies of low energy Ar+ ion implanted monocrystalline silicon for synchrotron applications', Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Том. 534, стр. 97-102. https://doi.org/10.1016/j.nimb.2022.11.016

APA

Kumar, N., Volodin, V. A., Goryainov, S. V., Chernyshev, A. K., Kozakov, A. T., Scrjabin, A. A., Chkhalo, N. I., Mikhailenko, M. S., Pestov, A. E., & Zorina, M. V. (2023). Raman scattering studies of low energy Ar+ ion implanted monocrystalline silicon for synchrotron applications. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 534, 97-102. https://doi.org/10.1016/j.nimb.2022.11.016

Vancouver

Kumar N, Volodin VA, Goryainov SV, Chernyshev AK, Kozakov AT, Scrjabin AA и др. Raman scattering studies of low energy Ar+ ion implanted monocrystalline silicon for synchrotron applications. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2023 янв. 1;534:97-102. doi: 10.1016/j.nimb.2022.11.016

Author

Kumar, N. ; Volodin, V. A. ; Goryainov, S. V. и др. / Raman scattering studies of low energy Ar+ ion implanted monocrystalline silicon for synchrotron applications. в: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2023 ; Том 534. стр. 97-102.

BibTeX

@article{5c37b4ac4de14f50a0ce7c39f533ad96,
title = "Raman scattering studies of low energy Ar+ ion implanted monocrystalline silicon for synchrotron applications",
abstract = "The surface and subsurface of the Ar+ ion implanted monocrystalline silicon was modified due to the exchange of energy and momentum of ions. This procedure is necessary for shape homogeneity of monocrystalline silicon surface useful in synchrotron application. The implantation has modified the vibrational modes of monocrystalline silicon investigated by Raman spectroscopy using polarized and unpolarized inelastically scattered light. An additional pronounced shift of peak position and broadening of the linewidth of optical phonon mode at lower frequency was observed in Ar+ ion implanted monocrystalline silicon. The shift and broadening of such peak was originated from the amorphous and nanocrystalline silicon. The maximum depth of such transformation was equal to the depth of Ar+ ion implantation with energies of 400 eV which was about 2 nm studied by ion profiling method. This was also confirmed by maximum depth of penetration of ultraviolet laser in monocrystalline silicon.",
keywords = "Ar ion implantation, Monocrystalline silicon, Raman spectroscopy",
author = "N. Kumar and Volodin, {V. A.} and Goryainov, {S. V.} and Chernyshev, {A. K.} and Kozakov, {A. T.} and Scrjabin, {A. A.} and Chkhalo, {N. I.} and Mikhailenko, {M. S.} and Pestov, {A. E.} and Zorina, {M. V.}",
note = "Funding Information: The study was supported by the Ministry of Science and Higher Education of the Russian Federation, project No. FWGW-2022-0011. The work was also carried out within the framework of State Program No. 0030-2021-0022. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",
year = "2023",
month = jan,
day = "1",
doi = "10.1016/j.nimb.2022.11.016",
language = "English",
volume = "534",
pages = "97--102",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Raman scattering studies of low energy Ar+ ion implanted monocrystalline silicon for synchrotron applications

AU - Kumar, N.

AU - Volodin, V. A.

AU - Goryainov, S. V.

AU - Chernyshev, A. K.

AU - Kozakov, A. T.

AU - Scrjabin, A. A.

AU - Chkhalo, N. I.

AU - Mikhailenko, M. S.

AU - Pestov, A. E.

AU - Zorina, M. V.

N1 - Funding Information: The study was supported by the Ministry of Science and Higher Education of the Russian Federation, project No. FWGW-2022-0011. The work was also carried out within the framework of State Program No. 0030-2021-0022. Publisher Copyright: © 2022 Elsevier B.V.

PY - 2023/1/1

Y1 - 2023/1/1

N2 - The surface and subsurface of the Ar+ ion implanted monocrystalline silicon was modified due to the exchange of energy and momentum of ions. This procedure is necessary for shape homogeneity of monocrystalline silicon surface useful in synchrotron application. The implantation has modified the vibrational modes of monocrystalline silicon investigated by Raman spectroscopy using polarized and unpolarized inelastically scattered light. An additional pronounced shift of peak position and broadening of the linewidth of optical phonon mode at lower frequency was observed in Ar+ ion implanted monocrystalline silicon. The shift and broadening of such peak was originated from the amorphous and nanocrystalline silicon. The maximum depth of such transformation was equal to the depth of Ar+ ion implantation with energies of 400 eV which was about 2 nm studied by ion profiling method. This was also confirmed by maximum depth of penetration of ultraviolet laser in monocrystalline silicon.

AB - The surface and subsurface of the Ar+ ion implanted monocrystalline silicon was modified due to the exchange of energy and momentum of ions. This procedure is necessary for shape homogeneity of monocrystalline silicon surface useful in synchrotron application. The implantation has modified the vibrational modes of monocrystalline silicon investigated by Raman spectroscopy using polarized and unpolarized inelastically scattered light. An additional pronounced shift of peak position and broadening of the linewidth of optical phonon mode at lower frequency was observed in Ar+ ion implanted monocrystalline silicon. The shift and broadening of such peak was originated from the amorphous and nanocrystalline silicon. The maximum depth of such transformation was equal to the depth of Ar+ ion implantation with energies of 400 eV which was about 2 nm studied by ion profiling method. This was also confirmed by maximum depth of penetration of ultraviolet laser in monocrystalline silicon.

KW - Ar ion implantation

KW - Monocrystalline silicon

KW - Raman spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=85142879994&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2022.11.016

DO - 10.1016/j.nimb.2022.11.016

M3 - Article

AN - SCOPUS:85142879994

VL - 534

SP - 97

EP - 102

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -

ID: 40100218