Raman scattering and photoluminescence in In+ and As+ ion-implanted SiO2 layers encapsulated with Si3N4 › Research Explorer

DOI

https://doi.org/10.1016/j.physb.2023.415201
Final published version

Ida Tyschenko
Zhongbin Si
Vladimir Volodin
Svetlana Cherkova
Vladimir Popov

Original language	English
Article number	415201
Number of pages	6
Journal	Physica B: Condensed Matter
Volume	667
DOIs	https://doi.org/10.1016/j.physb.2023.415201
Publication status	Published - 15 Oct 2023

Research areas

InAs, Ion implantation, Nanocrystals, Photoluminescence, Raman, SiO2

OECD FOS+WOS

2.02 ELECTRICAL ENG, ELECTRONIC ENG
2.05 MATERIALS ENGINEERING
1.03 PHYSICAL SCIENCES AND ASTRONOMY

ID: 55446908