Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications › Research Explorer

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Picosecond infrared laser crystallization of Ge layers in Ge/Si multi-nanolayers for optoelectronic applications

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

DOI

https://doi.org/10.1117/12.2622731
Final published version

V. A. Volodin
G. K. Krivyakin
A. V. Bulgakov
Y. Levy
J. Beránek
S. Nagisetty
Z. Bryknar
N. M. Bulgakova
P. V. Geydt
A. A. Popov

Original language	English
Title of host publication	International Conference on Micro- and Nano-Electronics 2021
Editors	Vladimir F. Lukichev, Konstantin V. Rudenko
Publisher	SPIE
ISBN (Electronic)	978-151065190-6
ISBN (Print)	9781510651906
DOIs	https://doi.org/10.1117/12.2622731
Publication status	Published - 2022
Event	14th International Conference on Micro- and Nano-Electronics 2021, ICMNE 2021 - Zvenigorod, Russian Federation Duration: 4 Oct 2021 → 8 Oct 2021

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	12157
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	14th International Conference on Micro- and Nano-Electronics 2021, ICMNE 2021
Country/Territory	Russian Federation
City	Zvenigorod
Period	04.10.2021 → 08.10.2021

Research areas

Ge/Si multi-nanolayers, Nonlinear effects in light absorption, Picosecond infrared pulsed laser annealing, Raman spectroscopy

OECD FOS+WOS

1.03 PHYSICAL SCIENCES AND ASTRONOMY
2.11.XQ SPECTROSCOPY
2.02.IQ ENGINEERING, ELECTRICAL & ELECTRONIC

ID: 35611931