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Optical Properties of Nonstoichiometric Silicon Oxide SiOx(x < 2). / Kruchinin, V. N.; Perevalov, T. V.; Kamaev, G. N. et al.

In: Optics and Spectroscopy, Vol. 127, No. 5, 01.11.2019, p. 836-840.

Research output: Contribution to journal › Article › peer-review

Harvard

Kruchinin, VN, Perevalov, TV, Kamaev, GN, Rykhlitskii, SV & Gritsenko, VA 2019, 'Optical Properties of Nonstoichiometric Silicon Oxide SiOx(x < 2)', Optics and Spectroscopy, vol. 127, no. 5, pp. 836-840. https://doi.org/10.1134/S0030400X19110183

APA

Kruchinin, V. N., Perevalov, T. V., Kamaev, G. N., Rykhlitskii, S. V., & Gritsenko, V. A. (2019). Optical Properties of Nonstoichiometric Silicon Oxide SiOx(x < 2). Optics and Spectroscopy, 127(5), 836-840. https://doi.org/10.1134/S0030400X19110183

Vancouver

Kruchinin VN, Perevalov TV, Kamaev GN, Rykhlitskii SV, Gritsenko VA. Optical Properties of Nonstoichiometric Silicon Oxide SiOx(x < 2). Optics and Spectroscopy. 2019 Nov 1;127(5):836-840. doi: 10.1134/S0030400X19110183

Author

Kruchinin, V. N. ; Perevalov, T. V. ; Kamaev, G. N. et al. / Optical Properties of Nonstoichiometric Silicon Oxide SiOx(x < 2). In: Optics and Spectroscopy. 2019 ; Vol. 127, No. 5. pp. 836-840.

BibTeX

@article{6bc3db41f62042f789b6eaac2f299785,
title = "Optical Properties of Nonstoichiometric Silicon Oxide SiOx(x < 2)",
abstract = "The optical properties of amorphous nonstoichiometric silicon oxide (SiOx) films of variable composition (x = 0.62–1.92) formed by plasma-enhanced chemical vapor deposition are studied in the spectral range of 1.12–4.96 eV. Spectral ellipsometry showed that the refractive index dispersion character allows one to assign the formed SiOx films to silicon-like films, dielectrics, or intermediate-conductivity-type films depending on the content of oxygen in the gas phase during synthesis. A model of the SiOx structure for ab initio calculations is proposed and describes well the experimental optical spectra. Ab initio calculations of the dependences of the SiOx refractive index and band gap on stoichiometry parameter x are performed.",
keywords = "ab initio modeling, ellipsometry, optical properties, silicon oxide",
author = "Kruchinin, {V. N.} and Perevalov, {T. V.} and Kamaev, {G. N.} and Rykhlitskii, {S. V.} and Gritsenko, {V. A.}",
year = "2019",
month = nov,
day = "1",
doi = "10.1134/S0030400X19110183",
language = "English",
volume = "127",
pages = "836--840",
journal = "Optics and Spectroscopy (English translation of Optika i Spektroskopiya)",
issn = "0030-400X",
publisher = "Maik Nauka Publishing / Springer SBM",
number = "5",

}

RIS

TY - JOUR

T1 - Optical Properties of Nonstoichiometric Silicon Oxide SiOx(x < 2)

AU - Kruchinin, V. N.

AU - Perevalov, T. V.

AU - Kamaev, G. N.

AU - Rykhlitskii, S. V.

AU - Gritsenko, V. A.

PY - 2019/11/1

Y1 - 2019/11/1

N2 - The optical properties of amorphous nonstoichiometric silicon oxide (SiOx) films of variable composition (x = 0.62–1.92) formed by plasma-enhanced chemical vapor deposition are studied in the spectral range of 1.12–4.96 eV. Spectral ellipsometry showed that the refractive index dispersion character allows one to assign the formed SiOx films to silicon-like films, dielectrics, or intermediate-conductivity-type films depending on the content of oxygen in the gas phase during synthesis. A model of the SiOx structure for ab initio calculations is proposed and describes well the experimental optical spectra. Ab initio calculations of the dependences of the SiOx refractive index and band gap on stoichiometry parameter x are performed.

AB - The optical properties of amorphous nonstoichiometric silicon oxide (SiOx) films of variable composition (x = 0.62–1.92) formed by plasma-enhanced chemical vapor deposition are studied in the spectral range of 1.12–4.96 eV. Spectral ellipsometry showed that the refractive index dispersion character allows one to assign the formed SiOx films to silicon-like films, dielectrics, or intermediate-conductivity-type films depending on the content of oxygen in the gas phase during synthesis. A model of the SiOx structure for ab initio calculations is proposed and describes well the experimental optical spectra. Ab initio calculations of the dependences of the SiOx refractive index and band gap on stoichiometry parameter x are performed.

KW - ab initio modeling

KW - ellipsometry

KW - optical properties

KW - silicon oxide

UR - http://www.scopus.com/inward/record.url?scp=85077051455&partnerID=8YFLogxK

U2 - 10.1134/S0030400X19110183

DO - 10.1134/S0030400X19110183

M3 - Article

AN - SCOPUS:85077051455

VL - 127

SP - 836

EP - 840

JO - Optics and Spectroscopy (English translation of Optika i Spektroskopiya)

JF - Optics and Spectroscopy (English translation of Optika i Spektroskopiya)

SN - 0030-400X

IS - 5

ER -

ID: 22979414