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New Method of Porous Ge Layer Fabrication : Structure and Optical Properties. / Gorokhov, E. B.; Astankova, K. N.; Azarov, I. A. et al.

In: Semiconductors, Vol. 52, No. 5, 01.05.2018, p. 628-631.

Research output: Contribution to journal › Article › peer-review

Harvard

Gorokhov, EB, Astankova, KN, Azarov, IA, Volodin, VA & Latyshev, AV 2018, 'New Method of Porous Ge Layer Fabrication: Structure and Optical Properties', Semiconductors, vol. 52, no. 5, pp. 628-631. https://doi.org/10.1134/S1063782618050111

APA

Gorokhov, E. B., Astankova, K. N., Azarov, I. A., Volodin, V. A., & Latyshev, A. V. (2018). New Method of Porous Ge Layer Fabrication: Structure and Optical Properties. Semiconductors, 52(5), 628-631. https://doi.org/10.1134/S1063782618050111

Vancouver

Gorokhov EB, Astankova KN, Azarov IA, Volodin VA, Latyshev AV. New Method of Porous Ge Layer Fabrication: Structure and Optical Properties. Semiconductors. 2018 May 1;52(5):628-631. doi: 10.1134/S1063782618050111

Author

Gorokhov, E. B. ; Astankova, K. N. ; Azarov, I. A. et al. / New Method of Porous Ge Layer Fabrication : Structure and Optical Properties. In: Semiconductors. 2018 ; Vol. 52, No. 5. pp. 628-631.

BibTeX

@article{61e4ed056ee745549d44df8f17eb3797,
title = "New Method of Porous Ge Layer Fabrication: Structure and Optical Properties",
abstract = "Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2<Ge–NCs> heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO2<Ge–NCs> heterolayers. The kinetics of air oxidation of amorphous porous Ge layers was investigated by scanning ellipsometry. Spectral ellipsometry allowed estimating the porosity of amorphous and crystalline porous Ge layers, which was ~70 and ~80%, respectively.",
author = "Gorokhov, {E. B.} and Astankova, {K. N.} and Azarov, {I. A.} and Volodin, {V. A.} and Latyshev, {A. V.}",
year = "2018",
month = may,
day = "1",
doi = "10.1134/S1063782618050111",
language = "English",
volume = "52",
pages = "628--631",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "5",

}

RIS

TY - JOUR

T1 - New Method of Porous Ge Layer Fabrication

T2 - Structure and Optical Properties

AU - Gorokhov, E. B.

AU - Astankova, K. N.

AU - Azarov, I. A.

AU - Volodin, V. A.

AU - Latyshev, A. V.

PY - 2018/5/1

Y1 - 2018/5/1

N2 - Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2<Ge–NCs> heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO2<Ge–NCs> heterolayers. The kinetics of air oxidation of amorphous porous Ge layers was investigated by scanning ellipsometry. Spectral ellipsometry allowed estimating the porosity of amorphous and crystalline porous Ge layers, which was ~70 and ~80%, respectively.

AB - Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2<Ge–NCs> heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO2<Ge–NCs> heterolayers. The kinetics of air oxidation of amorphous porous Ge layers was investigated by scanning ellipsometry. Spectral ellipsometry allowed estimating the porosity of amorphous and crystalline porous Ge layers, which was ~70 and ~80%, respectively.

UR - http://www.scopus.com/inward/record.url?scp=85045750175&partnerID=8YFLogxK

U2 - 10.1134/S1063782618050111

DO - 10.1134/S1063782618050111

M3 - Article

AN - SCOPUS:85045750175

VL - 52

SP - 628

EP - 631

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 5

ER -

ID: 12798892