TY - JOUR

T1 - New Method of Porous Ge Layer Fabrication

T2 - Structure and Optical Properties

AU - Gorokhov, E. B.

AU - Astankova, K. N.

AU - Azarov, I. A.

AU - Volodin, V. A.

AU - Latyshev, A. V.

PY - 2018/5/1

Y1 - 2018/5/1

N2 - Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2<Ge–NCs> heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO2<Ge–NCs> heterolayers. The kinetics of air oxidation of amorphous porous Ge layers was investigated by scanning ellipsometry. Spectral ellipsometry allowed estimating the porosity of amorphous and crystalline porous Ge layers, which was ~70 and ~80%, respectively.

AB - Porous germanium films were produced by selective removal of the GeO2 matrix from the GeO2<Ge–NCs> heterolayer in deionized water or HF. On the basis of Raman and infrared spectroscopy data it was supposed that a stable skeletal framework from agglomerated Ge nanoparticles (amorphous or crystalline) was formed after the selective etching of GeO2<Ge–NCs> heterolayers. The kinetics of air oxidation of amorphous porous Ge layers was investigated by scanning ellipsometry. Spectral ellipsometry allowed estimating the porosity of amorphous and crystalline porous Ge layers, which was ~70 and ~80%, respectively.

UR - http://www.scopus.com/inward/record.url?scp=85045750175&partnerID=8YFLogxK

U2 - 10.1134/S1063782618050111

DO - 10.1134/S1063782618050111

M3 - Article

AN - SCOPUS:85045750175

VL - 52

SP - 628

EP - 631

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 5

ER -