Standard

Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique. / Malin, T. V.; Mansurov, V. G.; Galitsyn, Yu G. et al.

In: Journal of Crystal Growth, Vol. 554, 125963, 15.01.2021.

Research output: Contribution to journal › Article › peer-review

Harvard

Malin, TV, Mansurov, VG, Galitsyn, YG, Milakhin, DS, Protasov, DY, Ber, BY, Kazantsev, DY, Ratnikov, VV, Shcheglov, MP, Smirnov, AN, Davydov, VY & Zhuravlev, KS 2021, 'Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique', Journal of Crystal Growth, vol. 554, 125963. https://doi.org/10.1016/j.jcrysgro.2020.125963

APA

Malin, T. V., Mansurov, V. G., Galitsyn, Y. G., Milakhin, D. S., Protasov, D. Y., Ber, B. Y., Kazantsev, D. Y., Ratnikov, V. V., Shcheglov, M. P., Smirnov, A. N., Davydov, V. Y., & Zhuravlev, K. S. (2021). Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique. Journal of Crystal Growth, 554, [125963]. https://doi.org/10.1016/j.jcrysgro.2020.125963

Vancouver

Malin TV, Mansurov VG, Galitsyn YG, Milakhin DS, Protasov DY, Ber BY et al. Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique. Journal of Crystal Growth. 2021 Jan 15;554:125963. doi: 10.1016/j.jcrysgro.2020.125963

Author

Malin, T. V. ; Mansurov, V. G. ; Galitsyn, Yu G. et al. / Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique. In: Journal of Crystal Growth. 2021 ; Vol. 554.

BibTeX

@article{6bca6d3ea03a4ef59b9cfbf277dfeb06,
title = "Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique",
abstract = "The work is devoted to the study of p-GaN: Mg epitaxial layers grown by the ammonia MBE technique. We find that the conductivity of GaN layers doped with Mg does not change with a postgrowth heat treatment. Formation of Mg3N2 nanocrystallites on GaN surface during epitaxial growth of the GaN layer with a high magnesium doping level was detected by the RHEED technique for the first time. It was shown that the Mg3N2 nanocrystallites formation competes with the acceptor states formation process. It has been proposed that the growth temperature can be applied as an additional “tuning” mechanism which affects the Mg incorporation into the growing GaN:Mg layers.",
keywords = "A1. MgN-crystallites, A1. RHEED, A3. Ammonia-MBE, B1. GaN:Mg, B1. p-GaN, Mg3N2-crystallites, GaN:Mg, Ammonia-MBE, p-GaN, RHEED",
author = "Malin, {T. V.} and Mansurov, {V. G.} and Galitsyn, {Yu G.} and Milakhin, {D. S.} and Protasov, {D. Yu} and Ber, {B. Ya} and Kazantsev, {D. Yu} and Ratnikov, {V. V.} and Shcheglov, {M. P.} and Smirnov, {A. N.} and Davydov, {V. Yu} and Zhuravlev, {K. S.}",
note = "Funding Information: This study was supported by the Ministry of Science and Higher Education of the Russian Federation as part of state assignment № 0306-2019-0008 «Heterostructures based on III-V materials for microwave electronics and microwave photoelectronics» and reported study was funded by RFBR and TUBITAK, project number 21-52-46001. SIMS measurements were performed using the CAMEA IMS7f equipment owned by the Federal Center of Multi-User Equipment “Material Science and Diagnostics for Advanced Technologies” supported by the Ministry of Education and Science of the Russian Federation (RFMEFI62117X0018). Publisher Copyright: {\textcopyright} 2020 Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2021",
month = jan,
day = "15",
doi = "10.1016/j.jcrysgro.2020.125963",
language = "English",
volume = "554",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique

AU - Malin, T. V.

AU - Mansurov, V. G.

AU - Galitsyn, Yu G.

AU - Milakhin, D. S.

AU - Protasov, D. Yu

AU - Ber, B. Ya

AU - Kazantsev, D. Yu

AU - Ratnikov, V. V.

AU - Shcheglov, M. P.

AU - Smirnov, A. N.

AU - Davydov, V. Yu

AU - Zhuravlev, K. S.

N1 - Funding Information: This study was supported by the Ministry of Science and Higher Education of the Russian Federation as part of state assignment № 0306-2019-0008 «Heterostructures based on III-V materials for microwave electronics and microwave photoelectronics» and reported study was funded by RFBR and TUBITAK, project number 21-52-46001. SIMS measurements were performed using the CAMEA IMS7f equipment owned by the Federal Center of Multi-User Equipment “Material Science and Diagnostics for Advanced Technologies” supported by the Ministry of Education and Science of the Russian Federation (RFMEFI62117X0018). Publisher Copyright: © 2020 Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2021/1/15

Y1 - 2021/1/15

N2 - The work is devoted to the study of p-GaN: Mg epitaxial layers grown by the ammonia MBE technique. We find that the conductivity of GaN layers doped with Mg does not change with a postgrowth heat treatment. Formation of Mg3N2 nanocrystallites on GaN surface during epitaxial growth of the GaN layer with a high magnesium doping level was detected by the RHEED technique for the first time. It was shown that the Mg3N2 nanocrystallites formation competes with the acceptor states formation process. It has been proposed that the growth temperature can be applied as an additional “tuning” mechanism which affects the Mg incorporation into the growing GaN:Mg layers.

AB - The work is devoted to the study of p-GaN: Mg epitaxial layers grown by the ammonia MBE technique. We find that the conductivity of GaN layers doped with Mg does not change with a postgrowth heat treatment. Formation of Mg3N2 nanocrystallites on GaN surface during epitaxial growth of the GaN layer with a high magnesium doping level was detected by the RHEED technique for the first time. It was shown that the Mg3N2 nanocrystallites formation competes with the acceptor states formation process. It has been proposed that the growth temperature can be applied as an additional “tuning” mechanism which affects the Mg incorporation into the growing GaN:Mg layers.

KW - A1. MgN-crystallites

KW - A1. RHEED

KW - A3. Ammonia-MBE

KW - B1. GaN:Mg

KW - B1. p-GaN

KW - Mg3N2-crystallites

KW - GaN:Mg

KW - Ammonia-MBE

KW - p-GaN

KW - RHEED

UR - http://www.scopus.com/inward/record.url?scp=85096659797&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2020.125963

DO - 10.1016/j.jcrysgro.2020.125963

M3 - Article

AN - SCOPUS:85096659797

VL - 554

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

M1 - 125963

ER -

ID: 26141336