Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique. / Malin, T. V.; Mansurov, V. G.; Galitsyn, Yu G. и др.
в: Journal of Crystal Growth, Том 554, 125963, 15.01.2021.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique
AU - Malin, T. V.
AU - Mansurov, V. G.
AU - Galitsyn, Yu G.
AU - Milakhin, D. S.
AU - Protasov, D. Yu
AU - Ber, B. Ya
AU - Kazantsev, D. Yu
AU - Ratnikov, V. V.
AU - Shcheglov, M. P.
AU - Smirnov, A. N.
AU - Davydov, V. Yu
AU - Zhuravlev, K. S.
N1 - Funding Information: This study was supported by the Ministry of Science and Higher Education of the Russian Federation as part of state assignment № 0306-2019-0008 «Heterostructures based on III-V materials for microwave electronics and microwave photoelectronics» and reported study was funded by RFBR and TUBITAK, project number 21-52-46001. SIMS measurements were performed using the CAMEA IMS7f equipment owned by the Federal Center of Multi-User Equipment “Material Science and Diagnostics for Advanced Technologies” supported by the Ministry of Education and Science of the Russian Federation (RFMEFI62117X0018). Publisher Copyright: © 2020 Copyright: Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2021/1/15
Y1 - 2021/1/15
N2 - The work is devoted to the study of p-GaN: Mg epitaxial layers grown by the ammonia MBE technique. We find that the conductivity of GaN layers doped with Mg does not change with a postgrowth heat treatment. Formation of Mg3N2 nanocrystallites on GaN surface during epitaxial growth of the GaN layer with a high magnesium doping level was detected by the RHEED technique for the first time. It was shown that the Mg3N2 nanocrystallites formation competes with the acceptor states formation process. It has been proposed that the growth temperature can be applied as an additional “tuning” mechanism which affects the Mg incorporation into the growing GaN:Mg layers.
AB - The work is devoted to the study of p-GaN: Mg epitaxial layers grown by the ammonia MBE technique. We find that the conductivity of GaN layers doped with Mg does not change with a postgrowth heat treatment. Formation of Mg3N2 nanocrystallites on GaN surface during epitaxial growth of the GaN layer with a high magnesium doping level was detected by the RHEED technique for the first time. It was shown that the Mg3N2 nanocrystallites formation competes with the acceptor states formation process. It has been proposed that the growth temperature can be applied as an additional “tuning” mechanism which affects the Mg incorporation into the growing GaN:Mg layers.
KW - A1. MgN-crystallites
KW - A1. RHEED
KW - A3. Ammonia-MBE
KW - B1. GaN:Mg
KW - B1. p-GaN
KW - Mg3N2-crystallites
KW - GaN:Mg
KW - Ammonia-MBE
KW - p-GaN
KW - RHEED
UR - http://www.scopus.com/inward/record.url?scp=85096659797&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2020.125963
DO - 10.1016/j.jcrysgro.2020.125963
M3 - Article
AN - SCOPUS:85096659797
VL - 554
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
M1 - 125963
ER -
ID: 26141336