Mg3N2 nanocrystallites formation during the GaN:Mg layers growth by the NH3-MBE technique › Research Explorer

Novosibirsk State University's Research Portal

Mg₃N₂ nanocrystallites formation during the GaN:Mg layers growth by the NH₃-MBE technique

Research output: Contribution to journal › Article › peer-review

Лаборатория полупроводниковых и диэлектрических материалов ФФ

DOI

https://doi.org/10.1016/j.jcrysgro.2020.125963
Final published version

T. V. Malin
V. G. Mansurov
Yu G. Galitsyn
D. S. Milakhin
D. Yu Protasov
B. Ya Ber
D. Yu Kazantsev
V. V. Ratnikov
M. P. Shcheglov
A. N. Smirnov
V. Yu Davydov
K. S. Zhuravlev

Original language	English
Article number	125963
Number of pages	8
Journal	Journal of Crystal Growth
Volume	554
DOIs	https://doi.org/10.1016/j.jcrysgro.2020.125963
Publication status	Published - 15 Jan 2021

Research areas

A1. MgN-crystallites, A1. RHEED, A3. Ammonia-MBE, B1. GaN:Mg, B1. p-GaN, Mg3N2-crystallites, GaN:Mg, Ammonia-MBE, p-GaN, RHEED

OECD FOS+WOS

ID: 26141336