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Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films. / Volodin, V. A.; Kamaev, G. N.; Gritsenko, V. A. et al.

In: Applied Physics Letters, Vol. 114, No. 23, 233104, 10.06.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Volodin, VA, Kamaev, GN, Gritsenko, VA, Gismatulin, AA, Chin, A & Vergnat, M 2019, 'Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films', Applied Physics Letters, vol. 114, no. 23, 233104. https://doi.org/10.1063/1.5079690

APA

Volodin, V. A., Kamaev, G. N., Gritsenko, V. A., Gismatulin, A. A., Chin, A., & Vergnat, M. (2019). Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films. Applied Physics Letters, 114(23), [233104]. https://doi.org/10.1063/1.5079690

Vancouver

Volodin VA, Kamaev GN, Gritsenko VA, Gismatulin AA, Chin A, Vergnat M. Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films. Applied Physics Letters. 2019 Jun 10;114(23):233104. doi: 10.1063/1.5079690

Author

Volodin, V. A. ; Kamaev, G. N. ; Gritsenko, V. A. et al. / Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films. In: Applied Physics Letters. 2019 ; Vol. 114, No. 23.

BibTeX

@article{81a3ee4dfc6743d29bc597307a98aa03,
title = "Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films",
abstract = "The p-Si(or n-Si)/GeO[SiO2] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO2] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO2] or GeO[SiO] films.",
keywords = "NANOCRYSTALS, DEVICES, FIELD, SI",
author = "Volodin, {V. A.} and Kamaev, {G. N.} and Gritsenko, {V. A.} and Gismatulin, {A. A.} and A. Chin and M. Vergnat",
year = "2019",
month = jun,
day = "10",
doi = "10.1063/1.5079690",
language = "English",
volume = "114",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "23",

}

RIS

TY - JOUR

T1 - Memristor effect in GeO[SiO2] and GeO[SiO] solid alloys films

AU - Volodin, V. A.

AU - Kamaev, G. N.

AU - Gritsenko, V. A.

AU - Gismatulin, A. A.

AU - Chin, A.

AU - Vergnat, M.

PY - 2019/6/10

Y1 - 2019/6/10

N2 - The p-Si(or n-Si)/GeO[SiO2] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO2] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO2] or GeO[SiO] films.

AB - The p-Si(or n-Si)/GeO[SiO2] (or GeO[SiO])/indium-tin-oxide (ITO) structures were fabricated by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum and further deposition of ITO contacts using the magnetron sputtering technique. The structural properties of the GeO[SiO2] and GeO[SiO] films were studied using FTIR and Raman spectroscopy. According to Raman data, the GeO[SiO] films deposited at a temperature of 100 °C contain amorphous Ge clusters. Their current-voltage characteristics were measured in the air atmosphere, and resistive switching (memristor effect) was observed in structures without a preliminary forming procedure. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport in the high-resistive state and the low-resistive state of memristors based on GeO[SiO2] or GeO[SiO] films.

KW - NANOCRYSTALS

KW - DEVICES

KW - FIELD

KW - SI

UR - http://www.scopus.com/inward/record.url?scp=85067298957&partnerID=8YFLogxK

U2 - 10.1063/1.5079690

DO - 10.1063/1.5079690

M3 - Article

AN - SCOPUS:85067298957

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 23

M1 - 233104

ER -

ID: 20588941