MD Simulation of Sputtering of Single-Crystal Silicon and Germanium by Argon Clusters

In: Journal of Surface Investigation, Vol. 20, No. 3, 25.06.2026, p. 543-546.

Research output: Contribution to journal › Article › peer-review

@article{9ee45a046059451ba93b86fc3086816f,

title = "MD Simulation of Sputtering of Single-Crystal Silicon and Germanium by Argon Clusters",

author = "Николаев, {Иван Владимирович} and Стишенко, {Павел Викторович} and Коробейщиков, {Николай Геннадьевич}",

year = "2026",

month = jun,

day = "25",

doi = "10.1134/S102745102670103X",

language = "English",

volume = "20",

pages = "543--546",

journal = "Journal of Surface Investigation",

issn = "1027-4510",

publisher = "ФГБУ {"}Издательство {"}Наука{"}",

number = "3",

}

TY - JOUR

T1 - MD Simulation of Sputtering of Single-Crystal Silicon and Germanium by Argon Clusters

AU - Николаев, Иван Владимирович

AU - Стишенко, Павел Викторович

AU - Коробейщиков, Николай Геннадьевич

PY - 2026/6/25

Y1 - 2026/6/25

U2 - 10.1134/S102745102670103X

DO - 10.1134/S102745102670103X

M3 - Article

VL - 20

SP - 543

EP - 546

JO - Journal of Surface Investigation

JF - Journal of Surface Investigation

SN - 1027-4510

IS - 3

ER -

ID: 84700031