Standard

Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions. / Cherkova, S. G.; Volodin, V. A.; Skuratov, V. A. et al.

International Conference on Micro- and Nano-Electronics 2018. ed. / Vladimir F. Lukichev; Konstantin V. Rudenko. Vol. 11022 SPIE, 2019. 1102214 (Proceedings of SPIE; Vol. 11022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review

Harvard

Cherkova, SG, Volodin, VA, Skuratov, VA, Stoffel, M, Rinnert, H & Vergnat, M 2019, Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions. in VF Lukichev & KV Rudenko (eds), International Conference on Micro- and Nano-Electronics 2018. vol. 11022, 1102214, Proceedings of SPIE, vol. 11022, SPIE, International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018, Zvenigorod, Russian Federation, 01.10.2018. https://doi.org/10.1117/12.2521696

APA

Cherkova, S. G., Volodin, V. A., Skuratov, V. A., Stoffel, M., Rinnert, H., & Vergnat, M. (2019). Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions. In V. F. Lukichev, & K. V. Rudenko (Eds.), International Conference on Micro- and Nano-Electronics 2018 (Vol. 11022). [1102214] (Proceedings of SPIE; Vol. 11022). SPIE. https://doi.org/10.1117/12.2521696

Vancouver

Cherkova SG, Volodin VA, Skuratov VA, Stoffel M, Rinnert H, Vergnat M. Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions. In Lukichev VF, Rudenko KV, editors, International Conference on Micro- and Nano-Electronics 2018. Vol. 11022. SPIE. 2019. 1102214. (Proceedings of SPIE). doi: 10.1117/12.2521696

Author

Cherkova, S. G. ; Volodin, V. A. ; Skuratov, V. A. et al. / Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions. International Conference on Micro- and Nano-Electronics 2018. editor / Vladimir F. Lukichev ; Konstantin V. Rudenko. Vol. 11022 SPIE, 2019. (Proceedings of SPIE).

BibTeX

@inproceedings{252230e684334701b41e38b2a81600a0,
title = "Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions",
abstract = " The luminescent and structural properties of GeO x thin films and GeO/SiO 2 multilayer heterostructures, irradiated with 167 MeV Xe ions with fluencies up to 10 13 cm -2 , were studied. We report strong photoluminescence in visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. And infrared luminescence bands (from ∼0.8 eV to ∼1.2 eV) were observed in as-deposited and irradiated structures, which can be related to defects or defects complexes in Ge x Si y O 2 glass and partially in Si substrate. It was shown that swift heavy ion irradiation does not lead to the expected phase separation of germanium suboxide into germanium nanoclusters and GeO 2 , but causes the intermixing of GeO/SiO 2 layers with the formation of Ge-O-Si bonds. ",
keywords = "photoluminescence, Si Ge O compounds, structural defect, swift heavy ions, IRRADIATION, PHOTOLUMINESCENCE, BLUE, NANOCRYSTALS, DEFECT, OPTICAL-PROPERTIES, OXIDES, SixGeyOz compounds",
author = "Cherkova, {S. G.} and Volodin, {V. A.} and Skuratov, {V. A.} and M. Stoffel and H. Rinnert and M. Vergnat",
year = "2019",
month = jan,
day = "1",
doi = "10.1117/12.2521696",
language = "English",
volume = "11022",
series = "Proceedings of SPIE",
publisher = "SPIE",
editor = "Lukichev, {Vladimir F.} and Rudenko, {Konstantin V.}",
booktitle = "International Conference on Micro- and Nano-Electronics 2018",
address = "United States",
note = "International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018 ; Conference date: 01-10-2018 Through 05-10-2018",

}

RIS

TY - GEN

T1 - Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions

AU - Cherkova, S. G.

AU - Volodin, V. A.

AU - Skuratov, V. A.

AU - Stoffel, M.

AU - Rinnert, H.

AU - Vergnat, M.

PY - 2019/1/1

Y1 - 2019/1/1

N2 - The luminescent and structural properties of GeO x thin films and GeO/SiO 2 multilayer heterostructures, irradiated with 167 MeV Xe ions with fluencies up to 10 13 cm -2 , were studied. We report strong photoluminescence in visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. And infrared luminescence bands (from ∼0.8 eV to ∼1.2 eV) were observed in as-deposited and irradiated structures, which can be related to defects or defects complexes in Ge x Si y O 2 glass and partially in Si substrate. It was shown that swift heavy ion irradiation does not lead to the expected phase separation of germanium suboxide into germanium nanoclusters and GeO 2 , but causes the intermixing of GeO/SiO 2 layers with the formation of Ge-O-Si bonds.

AB - The luminescent and structural properties of GeO x thin films and GeO/SiO 2 multilayer heterostructures, irradiated with 167 MeV Xe ions with fluencies up to 10 13 cm -2 , were studied. We report strong photoluminescence in visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. And infrared luminescence bands (from ∼0.8 eV to ∼1.2 eV) were observed in as-deposited and irradiated structures, which can be related to defects or defects complexes in Ge x Si y O 2 glass and partially in Si substrate. It was shown that swift heavy ion irradiation does not lead to the expected phase separation of germanium suboxide into germanium nanoclusters and GeO 2 , but causes the intermixing of GeO/SiO 2 layers with the formation of Ge-O-Si bonds.

KW - photoluminescence

KW - Si Ge O compounds

KW - structural defect

KW - swift heavy ions

KW - IRRADIATION

KW - PHOTOLUMINESCENCE

KW - BLUE

KW - NANOCRYSTALS

KW - DEFECT

KW - OPTICAL-PROPERTIES

KW - OXIDES

KW - SixGeyOz compounds

UR - http://www.scopus.com/inward/record.url?scp=85063426834&partnerID=8YFLogxK

U2 - 10.1117/12.2521696

DO - 10.1117/12.2521696

M3 - Conference contribution

AN - SCOPUS:85063426834

VL - 11022

T3 - Proceedings of SPIE

BT - International Conference on Micro- and Nano-Electronics 2018

A2 - Lukichev, Vladimir F.

A2 - Rudenko, Konstantin V.

PB - SPIE

T2 - International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018

Y2 - 1 October 2018 through 5 October 2018

ER -

ID: 19039787