Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions. / Cherkova, S. G.; Volodin, V. A.; Skuratov, V. A. и др.
International Conference on Micro- and Nano-Electronics 2018. ред. / Vladimir F. Lukichev; Konstantin V. Rudenko. Том 11022 SPIE, 2019. 1102214 (Proceedings of SPIE; Том 11022).Результаты исследований: Публикации в книгах, отчётах, сборниках, трудах конференций › статья в сборнике материалов конференции › научная › Рецензирование
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TY - GEN
T1 - Luminescent properties of GeO x thin films and GeO/SiO 2 heterostructures modified with swift heavy ions
AU - Cherkova, S. G.
AU - Volodin, V. A.
AU - Skuratov, V. A.
AU - Stoffel, M.
AU - Rinnert, H.
AU - Vergnat, M.
PY - 2019/1/1
Y1 - 2019/1/1
N2 - The luminescent and structural properties of GeO x thin films and GeO/SiO 2 multilayer heterostructures, irradiated with 167 MeV Xe ions with fluencies up to 10 13 cm -2 , were studied. We report strong photoluminescence in visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. And infrared luminescence bands (from ∼0.8 eV to ∼1.2 eV) were observed in as-deposited and irradiated structures, which can be related to defects or defects complexes in Ge x Si y O 2 glass and partially in Si substrate. It was shown that swift heavy ion irradiation does not lead to the expected phase separation of germanium suboxide into germanium nanoclusters and GeO 2 , but causes the intermixing of GeO/SiO 2 layers with the formation of Ge-O-Si bonds.
AB - The luminescent and structural properties of GeO x thin films and GeO/SiO 2 multilayer heterostructures, irradiated with 167 MeV Xe ions with fluencies up to 10 13 cm -2 , were studied. We report strong photoluminescence in visible range at room temperature, which is most probably due to Ge-related defect-induced radiative transitions. And infrared luminescence bands (from ∼0.8 eV to ∼1.2 eV) were observed in as-deposited and irradiated structures, which can be related to defects or defects complexes in Ge x Si y O 2 glass and partially in Si substrate. It was shown that swift heavy ion irradiation does not lead to the expected phase separation of germanium suboxide into germanium nanoclusters and GeO 2 , but causes the intermixing of GeO/SiO 2 layers with the formation of Ge-O-Si bonds.
KW - photoluminescence
KW - Si Ge O compounds
KW - structural defect
KW - swift heavy ions
KW - IRRADIATION
KW - PHOTOLUMINESCENCE
KW - BLUE
KW - NANOCRYSTALS
KW - DEFECT
KW - OPTICAL-PROPERTIES
KW - OXIDES
KW - SixGeyOz compounds
UR - http://www.scopus.com/inward/record.url?scp=85063426834&partnerID=8YFLogxK
U2 - 10.1117/12.2521696
DO - 10.1117/12.2521696
M3 - Conference contribution
AN - SCOPUS:85063426834
VL - 11022
T3 - Proceedings of SPIE
BT - International Conference on Micro- and Nano-Electronics 2018
A2 - Lukichev, Vladimir F.
A2 - Rudenko, Konstantin V.
PB - SPIE
T2 - International Conference on Micro- and Nano-Electronics 2018, ICMNE 2018
Y2 - 1 October 2018 through 5 October 2018
ER -
ID: 19039787