Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
Light sensitive memristors based on GeSixOy films with Ge nanoclusters. / Volodin, Vladimir A.; Kamaev, Gennady N.; Yushkov, Ivan D. et al.
International Conference on Micro- and Nano-Electronics 2021. ed. / Vladimir F. Lukichev; Konstantin V. Rudenko. SPIE, 2022. 121570A (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 12157).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Research › peer-review
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TY - GEN
T1 - Light sensitive memristors based on GeSixOy films with Ge nanoclusters
AU - Volodin, Vladimir A.
AU - Kamaev, Gennady N.
AU - Yushkov, Ivan D.
AU - Krivyakin, Gregory K.
AU - Cherkova, Svetlana G.
AU - Vergnat, Michel
N1 - Funding Information: The study was supported by Russian Foundation for Basic Research (project No. 19-07-00367). Publisher Copyright: © 2022 SPIE.
PY - 2022/1/31
Y1 - 2022/1/31
N2 - For the development of information technology, more and more memory arrays are needed. Recently, memristors have been the most promising candidates for the creation of modern universal memory. The possibility of light stimulated resistive switching (RS) is promising for creating optical computers, technical vision and neuron networks. The studied SixGeyOz solid alloys films (~50-65 nm) were obtained by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum (10-8 Torr) and deposition onto n+-type, p+-type Si(001), and on Al/SiO2/Si(001) heated up to 100°C. The transparent indium tin oxide (ITO) contacts were used as top electrode. It was found, that as-deposited GeOx[SiO](1-x) films contain amorphous Ge (a-Ge) nanoclusters. The furnace annealing at temperature 500 oC lead to further forming of a-Ge clusters in both types of the films. Reversible (up to several thousand cycles) RS from high resistance state (HRS) to low resistance state (LRS) (memristor effect) were observed for the semiconductor-dielectric-metal structures, namely p+-Si (or n+-Si)/GeO[SiO2] (or GeO[SiO])/ITO structures (MIS structures) in air atmosphere. Both negative and positive photoconductivity was observed in the annealed MIS structure when both negative/positive voltage biases were applied to the top ITO electrode. This is possibly due to light-stimulated recharging of holes from a-Ge nanoclusters, which act as deep traps. The effects of light-induced RS was observed for annealed MIS structures based on GeO[SiO] films with a-Ge nanoclusters. These results are promising for creation of photomemristors and optoelectronic devices combining the properties of a memristor.
AB - For the development of information technology, more and more memory arrays are needed. Recently, memristors have been the most promising candidates for the creation of modern universal memory. The possibility of light stimulated resistive switching (RS) is promising for creating optical computers, technical vision and neuron networks. The studied SixGeyOz solid alloys films (~50-65 nm) were obtained by simultaneous evaporation of GeO2 and SiO2 (or SiO) powders in high vacuum (10-8 Torr) and deposition onto n+-type, p+-type Si(001), and on Al/SiO2/Si(001) heated up to 100°C. The transparent indium tin oxide (ITO) contacts were used as top electrode. It was found, that as-deposited GeOx[SiO](1-x) films contain amorphous Ge (a-Ge) nanoclusters. The furnace annealing at temperature 500 oC lead to further forming of a-Ge clusters in both types of the films. Reversible (up to several thousand cycles) RS from high resistance state (HRS) to low resistance state (LRS) (memristor effect) were observed for the semiconductor-dielectric-metal structures, namely p+-Si (or n+-Si)/GeO[SiO2] (or GeO[SiO])/ITO structures (MIS structures) in air atmosphere. Both negative and positive photoconductivity was observed in the annealed MIS structure when both negative/positive voltage biases were applied to the top ITO electrode. This is possibly due to light-stimulated recharging of holes from a-Ge nanoclusters, which act as deep traps. The effects of light-induced RS was observed for annealed MIS structures based on GeO[SiO] films with a-Ge nanoclusters. These results are promising for creation of photomemristors and optoelectronic devices combining the properties of a memristor.
KW - Germanium nanoclusters
KW - Memristors
KW - Negative photoconductivity
KW - Nonstoichiometric germanium silicate glass
KW - Photomemristors
UR - http://www.scopus.com/inward/record.url?scp=85125669055&partnerID=8YFLogxK
UR - https://www.mendeley.com/catalogue/3fe00e1b-3145-3791-91b4-4fa85c2c3517/
U2 - 10.1117/12.2622642
DO - 10.1117/12.2622642
M3 - Conference contribution
AN - SCOPUS:85125669055
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - International Conference on Micro- and Nano-Electronics 2021
A2 - Lukichev, Vladimir F.
A2 - Rudenko, Konstantin V.
PB - SPIE
T2 - 14th International Conference on Micro- and Nano-Electronics 2021, ICMNE 2021
Y2 - 4 October 2021 through 8 October 2021
ER -
ID: 35611312