Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure

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Ion-Beam Synthesis of the Crystalline Ge Phase in SiO_xN_y Films upon Annealing under High Pressure. / Tyschenko, I. E.; Krivyakin, G. K.; Volodin, V. A.

In: Semiconductors, Vol. 52, No. 2, 01.02.2018, p. 268-272.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{4aa2d59cd980478f968369588324c773,

title = "Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure",

abstract = "The nucleation of the crystalline Ge phase in SiOxNy films implanted with Ge+ ions with the energy 55 keV to doses of 2.1 × 1015–1.7 × 1016 cm–2 and then annealed at a temperature of Ta = 800–1300°C under pressures of 1 bar and 1–12 kbar is studied. From analysis of the Raman spectra, it is concluded that amorphous Ge precipitates increase in size upon hydrostatic compression at a temperature of 1000°C. Raman scattering at optical phonons localized in Ge nanocrystals is observed only after annealing of the samples with the highest content of implanted atoms at a temperature of 1300°C. In the photoluminescence spectra, a peak is observed at the wavelength ∼730 nm. The peak is considered to be the manifestation of the quantum-confinement effect in nanocrystals ∼3 nm in size.",

keywords = "PHOTOLUMINESCENCE, SIO2-FILMS, SILICON, LIGHT",

author = "Tyschenko, {I. E.} and Krivyakin, {G. K.} and Volodin, {V. A.}",

year = "2018",

month = feb,

day = "1",

doi = "10.1134/S1063782618020215",

language = "English",

volume = "52",

pages = "268--272",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "PLEIADES PUBLISHING INC",

number = "2",

}

RIS

TY - JOUR

T1 - Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure

AU - Tyschenko, I. E.

AU - Krivyakin, G. K.

AU - Volodin, V. A.

PY - 2018/2/1

Y1 - 2018/2/1

N2 - The nucleation of the crystalline Ge phase in SiOxNy films implanted with Ge+ ions with the energy 55 keV to doses of 2.1 × 1015–1.7 × 1016 cm–2 and then annealed at a temperature of Ta = 800–1300°C under pressures of 1 bar and 1–12 kbar is studied. From analysis of the Raman spectra, it is concluded that amorphous Ge precipitates increase in size upon hydrostatic compression at a temperature of 1000°C. Raman scattering at optical phonons localized in Ge nanocrystals is observed only after annealing of the samples with the highest content of implanted atoms at a temperature of 1300°C. In the photoluminescence spectra, a peak is observed at the wavelength ∼730 nm. The peak is considered to be the manifestation of the quantum-confinement effect in nanocrystals ∼3 nm in size.

AB - The nucleation of the crystalline Ge phase in SiOxNy films implanted with Ge+ ions with the energy 55 keV to doses of 2.1 × 1015–1.7 × 1016 cm–2 and then annealed at a temperature of Ta = 800–1300°C under pressures of 1 bar and 1–12 kbar is studied. From analysis of the Raman spectra, it is concluded that amorphous Ge precipitates increase in size upon hydrostatic compression at a temperature of 1000°C. Raman scattering at optical phonons localized in Ge nanocrystals is observed only after annealing of the samples with the highest content of implanted atoms at a temperature of 1300°C. In the photoluminescence spectra, a peak is observed at the wavelength ∼730 nm. The peak is considered to be the manifestation of the quantum-confinement effect in nanocrystals ∼3 nm in size.

KW - PHOTOLUMINESCENCE

KW - SIO2-FILMS

KW - SILICON

KW - LIGHT

UR - http://www.scopus.com/inward/record.url?scp=85041414429&partnerID=8YFLogxK

U2 - 10.1134/S1063782618020215

DO - 10.1134/S1063782618020215

M3 - Article

AN - SCOPUS:85041414429

VL - 52

SP - 268

EP - 272

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 10453868