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Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure. / Tyschenko, I. E.; Krivyakin, G. K.; Volodin, V. A.

в: Semiconductors, Том 52, № 2, 01.02.2018, стр. 268-272.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Tyschenko, IE, Krivyakin, GK & Volodin, VA 2018, 'Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure', Semiconductors, Том. 52, № 2, стр. 268-272. https://doi.org/10.1134/S1063782618020215

APA

Tyschenko, I. E., Krivyakin, G. K., & Volodin, V. A. (2018). Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure. Semiconductors, 52(2), 268-272. https://doi.org/10.1134/S1063782618020215

Vancouver

Tyschenko IE, Krivyakin GK, Volodin VA. Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure. Semiconductors. 2018 февр. 1;52(2):268-272. doi: 10.1134/S1063782618020215

Author

Tyschenko, I. E. ; Krivyakin, G. K. ; Volodin, V. A. / Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure. в: Semiconductors. 2018 ; Том 52, № 2. стр. 268-272.

BibTeX

@article{4aa2d59cd980478f968369588324c773,
title = "Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure",
abstract = "The nucleation of the crystalline Ge phase in SiOxNy films implanted with Ge+ ions with the energy 55 keV to doses of 2.1 × 1015–1.7 × 1016 cm–2 and then annealed at a temperature of Ta = 800–1300°C under pressures of 1 bar and 1–12 kbar is studied. From analysis of the Raman spectra, it is concluded that amorphous Ge precipitates increase in size upon hydrostatic compression at a temperature of 1000°C. Raman scattering at optical phonons localized in Ge nanocrystals is observed only after annealing of the samples with the highest content of implanted atoms at a temperature of 1300°C. In the photoluminescence spectra, a peak is observed at the wavelength ∼730 nm. The peak is considered to be the manifestation of the quantum-confinement effect in nanocrystals ∼3 nm in size.",
keywords = "PHOTOLUMINESCENCE, SIO2-FILMS, SILICON, LIGHT",
author = "Tyschenko, {I. E.} and Krivyakin, {G. K.} and Volodin, {V. A.}",
year = "2018",
month = feb,
day = "1",
doi = "10.1134/S1063782618020215",
language = "English",
volume = "52",
pages = "268--272",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "2",

}

RIS

TY - JOUR

T1 - Ion-Beam Synthesis of the Crystalline Ge Phase in SiOxNy Films upon Annealing under High Pressure

AU - Tyschenko, I. E.

AU - Krivyakin, G. K.

AU - Volodin, V. A.

PY - 2018/2/1

Y1 - 2018/2/1

N2 - The nucleation of the crystalline Ge phase in SiOxNy films implanted with Ge+ ions with the energy 55 keV to doses of 2.1 × 1015–1.7 × 1016 cm–2 and then annealed at a temperature of Ta = 800–1300°C under pressures of 1 bar and 1–12 kbar is studied. From analysis of the Raman spectra, it is concluded that amorphous Ge precipitates increase in size upon hydrostatic compression at a temperature of 1000°C. Raman scattering at optical phonons localized in Ge nanocrystals is observed only after annealing of the samples with the highest content of implanted atoms at a temperature of 1300°C. In the photoluminescence spectra, a peak is observed at the wavelength ∼730 nm. The peak is considered to be the manifestation of the quantum-confinement effect in nanocrystals ∼3 nm in size.

AB - The nucleation of the crystalline Ge phase in SiOxNy films implanted with Ge+ ions with the energy 55 keV to doses of 2.1 × 1015–1.7 × 1016 cm–2 and then annealed at a temperature of Ta = 800–1300°C under pressures of 1 bar and 1–12 kbar is studied. From analysis of the Raman spectra, it is concluded that amorphous Ge precipitates increase in size upon hydrostatic compression at a temperature of 1000°C. Raman scattering at optical phonons localized in Ge nanocrystals is observed only after annealing of the samples with the highest content of implanted atoms at a temperature of 1300°C. In the photoluminescence spectra, a peak is observed at the wavelength ∼730 nm. The peak is considered to be the manifestation of the quantum-confinement effect in nanocrystals ∼3 nm in size.

KW - PHOTOLUMINESCENCE

KW - SIO2-FILMS

KW - SILICON

KW - LIGHT

UR - http://www.scopus.com/inward/record.url?scp=85041414429&partnerID=8YFLogxK

U2 - 10.1134/S1063782618020215

DO - 10.1134/S1063782618020215

M3 - Article

AN - SCOPUS:85041414429

VL - 52

SP - 268

EP - 272

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 2

ER -

ID: 10453868