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In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.1016/j.jcrysgro.2022.126898
Final published version

V. A. Shvets
D. V. Marin
I. A. Azarov
M. V. Yakushev
S. V. Rykhlitskii

Original language	English
Article number	126898
Journal	Journal of Crystal Growth
Volume	599
DOIs	https://doi.org/10.1016/j.jcrysgro.2022.126898
Publication status	Published - 1 Dec 2022

OECD FOS+WOS

2.05 MATERIALS ENGINEERING
1.03 PHYSICAL SCIENCES AND ASTRONOMY
1.04 CHEMICAL SCIENCES

Research areas

A1. In situ characterization, A1. Spectroscopic ellipsometry, A1. Temperature control, A3. Molecular beam epitaxy, B2. Semiconducting II–VI materials

ID: 38159175