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In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe. / Shvets, V. A.; Marin, D. V.; Azarov, I. A. et al.

In: Journal of Crystal Growth, Vol. 599, 126898, 01.12.2022.

Research output: Contribution to journal › Article › peer-review

Harvard

Shvets, VA, Marin, DV, Azarov, IA, Yakushev, MV & Rykhlitskii, SV 2022, 'In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe', Journal of Crystal Growth, vol. 599, 126898. https://doi.org/10.1016/j.jcrysgro.2022.126898

APA

Shvets, V. A., Marin, D. V., Azarov, I. A., Yakushev, M. V., & Rykhlitskii, S. V. (2022). In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe. Journal of Crystal Growth, 599, [126898]. https://doi.org/10.1016/j.jcrysgro.2022.126898

Vancouver

Shvets VA, Marin DV, Azarov IA, Yakushev MV, Rykhlitskii SV. In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe. Journal of Crystal Growth. 2022 Dec 1;599:126898. doi: 10.1016/j.jcrysgro.2022.126898

Author

Shvets, V. A. ; Marin, D. V. ; Azarov, I. A. et al. / In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe. In: Journal of Crystal Growth. 2022 ; Vol. 599.

BibTeX

@article{a2ca8aaee56e43b99a4ff9b4bcddf075,
title = "In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe",
abstract = "In situ temperature control is required to obtain HgCdTe layers of high crystalline perfection by molecular beam epitaxy. To solve this problem, we used spectroscopic ellipsometry. Various methods have been developed for measuring the temperature before the start of epitaxy. They are based on the analysis of different regions of the ellipsometric spectra of the CdTe buffer layer. An experimental comparison of the suggested methods shows that the temperature measurement accuracy is several degrees, and the sensitivity reaches fractions of a degree. At the stage of stationary growth of layers, it is possible to determine the change in temperature and composition from the kinetics of ellipsometric spectra. Ellipsometric measurements made during the growth of HgCdTe with a sharp change in the heating regime showed correlated changes in both temperature and composition.",
keywords = "A1. In situ characterization, A1. Spectroscopic ellipsometry, A1. Temperature control, A3. Molecular beam epitaxy, B2. Semiconducting II–VI materials",
author = "Shvets, {V. A.} and Marin, {D. V.} and Azarov, {I. A.} and Yakushev, {M. V.} and Rykhlitskii, {S. V.}",
note = "Funding Information: The authors are grateful to Dr. Remesnik V.G. for measuring the composition of MCT samples. This work was supported by a grant from the Ministry of Science and Higher Education of the Russian Federation No. 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",
year = "2022",
month = dec,
day = "1",
doi = "10.1016/j.jcrysgro.2022.126898",
language = "English",
volume = "599",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - In situ spectroscopic ellipsometry for temperature control in molecular beam epitaxy of HgCdTe

AU - Shvets, V. A.

AU - Marin, D. V.

AU - Azarov, I. A.

AU - Yakushev, M. V.

AU - Rykhlitskii, S. V.

N1 - Funding Information: The authors are grateful to Dr. Remesnik V.G. for measuring the composition of MCT samples. This work was supported by a grant from the Ministry of Science and Higher Education of the Russian Federation No. 075-15-2020-797 (13.1902.21.0024). Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/12/1

Y1 - 2022/12/1

N2 - In situ temperature control is required to obtain HgCdTe layers of high crystalline perfection by molecular beam epitaxy. To solve this problem, we used spectroscopic ellipsometry. Various methods have been developed for measuring the temperature before the start of epitaxy. They are based on the analysis of different regions of the ellipsometric spectra of the CdTe buffer layer. An experimental comparison of the suggested methods shows that the temperature measurement accuracy is several degrees, and the sensitivity reaches fractions of a degree. At the stage of stationary growth of layers, it is possible to determine the change in temperature and composition from the kinetics of ellipsometric spectra. Ellipsometric measurements made during the growth of HgCdTe with a sharp change in the heating regime showed correlated changes in both temperature and composition.

AB - In situ temperature control is required to obtain HgCdTe layers of high crystalline perfection by molecular beam epitaxy. To solve this problem, we used spectroscopic ellipsometry. Various methods have been developed for measuring the temperature before the start of epitaxy. They are based on the analysis of different regions of the ellipsometric spectra of the CdTe buffer layer. An experimental comparison of the suggested methods shows that the temperature measurement accuracy is several degrees, and the sensitivity reaches fractions of a degree. At the stage of stationary growth of layers, it is possible to determine the change in temperature and composition from the kinetics of ellipsometric spectra. Ellipsometric measurements made during the growth of HgCdTe with a sharp change in the heating regime showed correlated changes in both temperature and composition.

KW - A1. In situ characterization

KW - A1. Spectroscopic ellipsometry

KW - A1. Temperature control

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting II–VI materials

UR - http://www.scopus.com/inward/record.url?scp=85139266438&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2022.126898

DO - 10.1016/j.jcrysgro.2022.126898

M3 - Article

AN - SCOPUS:85139266438

VL - 599

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

M1 - 126898

ER -

ID: 38159175