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High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films. / Stuchlikova, The Ha; Stuchlik, Jiri; Remes, Zdenek et al.

In: Physica Status Solidi (B) Basic Research, Vol. 257, No. 6, 1900247, 01.06.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Stuchlikova, TH, Stuchlik, J, Remes, Z, Taylor, A, Mortet, V, Ashcheulov, P, Gregora, I, Krivyakin, G & Volodin, V 2020, 'High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films', Physica Status Solidi (B) Basic Research, vol. 257, no. 6, 1900247. https://doi.org/10.1002/pssb.201900247

APA

Stuchlikova, T. H., Stuchlik, J., Remes, Z., Taylor, A., Mortet, V., Ashcheulov, P., Gregora, I., Krivyakin, G., & Volodin, V. (2020). High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films. Physica Status Solidi (B) Basic Research, 257(6), [1900247]. https://doi.org/10.1002/pssb.201900247

Vancouver

Stuchlikova TH, Stuchlik J, Remes Z, Taylor A, Mortet V, Ashcheulov P et al. High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films. Physica Status Solidi (B) Basic Research. 2020 Jun 1;257(6):1900247. doi: 10.1002/pssb.201900247

Author

Stuchlikova, The Ha ; Stuchlik, Jiri ; Remes, Zdenek et al. / High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films. In: Physica Status Solidi (B) Basic Research. 2020 ; Vol. 257, No. 6.

BibTeX

@article{7fd7486a303b4fbfab8659b18fd28c70,
title = "High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films",
abstract = "Amorphous SiC:H (a-SiC:H) diode structures with different ratios of Si:C are deposited on transparent conductive boron-doped diamond-coated fused silica substrates by plasma-enhanced chemical vapor deposition. The boron-doped diamond thin films have been deposited at temperature 720 °C on the fused silica substrates with a Ti grid used to enhance electrical conductivity. The thin-film structures based on P-type, Intrinsic and N-type a-SiC:H thin films, shortly a-SiC:H PIN diodes, are characterized by current–voltage measurements under solar simulator illumination. For comparison, the same PIN structures are deposited on fluorine-doped tin oxide. Before deposition of the diode structures, the surface morphology is studied by scanning electron microscopy, and undoped layers deposited on the quartz substrates are characterized by temperature-resolved electrical resistivity, optical absorptance, Raman spectroscopy, and photoluminescence.",
keywords = "a-SiC:H, boron-doped diamond, fluorine-doped tin oxide, I–V characteristics, PIN diodes, DENSITY, PHOTOLUMINESCENCE, CARBIDE, H, GAP STATES, I-V characteristics, a-SiC",
author = "Stuchlikova, {The Ha} and Jiri Stuchlik and Zdenek Remes and Andrew Taylor and Vincent Mortet and Petr Ashcheulov and Ivan Gregora and Grigoriy Krivyakin and Vladimir Volodin",
note = "Publisher Copyright: {\textcopyright} 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",
year = "2020",
month = jun,
day = "1",
doi = "10.1002/pssb.201900247",
language = "English",
volume = "257",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "6",

}

RIS

TY - JOUR

T1 - High-Temperature PIN Diodes Based on Amorphous Hydrogenated Silicon-Carbon Alloys and Boron-Doped Diamond Thin Films

AU - Stuchlikova, The Ha

AU - Stuchlik, Jiri

AU - Remes, Zdenek

AU - Taylor, Andrew

AU - Mortet, Vincent

AU - Ashcheulov, Petr

AU - Gregora, Ivan

AU - Krivyakin, Grigoriy

AU - Volodin, Vladimir

N1 - Publisher Copyright: © 2020 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2020/6/1

Y1 - 2020/6/1

N2 - Amorphous SiC:H (a-SiC:H) diode structures with different ratios of Si:C are deposited on transparent conductive boron-doped diamond-coated fused silica substrates by plasma-enhanced chemical vapor deposition. The boron-doped diamond thin films have been deposited at temperature 720 °C on the fused silica substrates with a Ti grid used to enhance electrical conductivity. The thin-film structures based on P-type, Intrinsic and N-type a-SiC:H thin films, shortly a-SiC:H PIN diodes, are characterized by current–voltage measurements under solar simulator illumination. For comparison, the same PIN structures are deposited on fluorine-doped tin oxide. Before deposition of the diode structures, the surface morphology is studied by scanning electron microscopy, and undoped layers deposited on the quartz substrates are characterized by temperature-resolved electrical resistivity, optical absorptance, Raman spectroscopy, and photoluminescence.

AB - Amorphous SiC:H (a-SiC:H) diode structures with different ratios of Si:C are deposited on transparent conductive boron-doped diamond-coated fused silica substrates by plasma-enhanced chemical vapor deposition. The boron-doped diamond thin films have been deposited at temperature 720 °C on the fused silica substrates with a Ti grid used to enhance electrical conductivity. The thin-film structures based on P-type, Intrinsic and N-type a-SiC:H thin films, shortly a-SiC:H PIN diodes, are characterized by current–voltage measurements under solar simulator illumination. For comparison, the same PIN structures are deposited on fluorine-doped tin oxide. Before deposition of the diode structures, the surface morphology is studied by scanning electron microscopy, and undoped layers deposited on the quartz substrates are characterized by temperature-resolved electrical resistivity, optical absorptance, Raman spectroscopy, and photoluminescence.

KW - a-SiC:H

KW - boron-doped diamond

KW - fluorine-doped tin oxide

KW - I–V characteristics

KW - PIN diodes

KW - DENSITY

KW - PHOTOLUMINESCENCE

KW - CARBIDE

KW - H

KW - GAP STATES

KW - I-V characteristics

KW - a-SiC

UR - http://www.scopus.com/inward/record.url?scp=85083660309&partnerID=8YFLogxK

U2 - 10.1002/pssb.201900247

DO - 10.1002/pssb.201900247

M3 - Article

AN - SCOPUS:85083660309

VL - 257

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 6

M1 - 1900247

ER -

ID: 24075227