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Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility. / Antonova, I. V.; Nebogatikova, N. A.; Stepina, N. P. et al.

In: Journal of Materials Science, Vol. 56, No. 15, 05.2021, p. 9330–9343.

Research output: Contribution to journal › Article › peer-review

Harvard

Antonova, IV, Nebogatikova, NA, Stepina, NP, Volodin, VA, Kirienko, VV, Rybin, MG, Obrazstova, ED, Golyashov, VA, Kokh, KA & Tereshchenko, OE 2021, 'Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility', Journal of Materials Science, vol. 56, no. 15, pp. 9330–9343. https://doi.org/10.1007/s10853-021-05836-y

APA

Antonova, I. V., Nebogatikova, N. A., Stepina, N. P., Volodin, V. A., Kirienko, V. V., Rybin, M. G., Obrazstova, E. D., Golyashov, V. A., Kokh, K. A., & Tereshchenko, O. E. (2021). Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility. Journal of Materials Science, 56(15), 9330–9343. https://doi.org/10.1007/s10853-021-05836-y

Vancouver

Antonova IV, Nebogatikova NA, Stepina NP, Volodin VA, Kirienko VV, Rybin MG et al. Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility. Journal of Materials Science. 2021 May;56(15):9330–9343. doi: 10.1007/s10853-021-05836-y

Author

Antonova, I. V. ; Nebogatikova, N. A. ; Stepina, N. P. et al. / Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility. In: Journal of Materials Science. 2021 ; Vol. 56, No. 15. pp. 9330–9343.

BibTeX

@article{000873484f7a46efb9aee5c29b9321ef,
title = "Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility",
abstract = "Heterostructures of Bi2Se3 topological insulators were epitaxially grown on graphene by means of the physical vapor deposition at 500 °C. Micrometer-sized flakes with thickness 1 QL (quintuple layer ~ 1 nm) and films of millimeter-scale with thicknesses 2–6 QL had been grown on CVD graphene. The minimum thickness of large-scaled continuous Bi2Se3 films was found to be ~ 8 QL for the regime used. The heterostructures with a Bi2Se3 film thickness of > 10 QL had resistivity as low as 200–500 Ω/sq and a high room temperature carrier mobility ~ 1000–3400 cm2/Vs in the Bi2Se3/graphene interface channel. Moreover, the coexistence of a p-type graphene-related conductive channel, simultaneously with the n-type conductive surface channel of Bi2Se3, was observed. The improvement of the bottom Bi2Se3/graphene interface with the increase in the growth time clearly manifested itself in the increase of conductivity and carrier mobility in the grown layer. The grown Bi2Se3/G structures have lower resistivities and more than one order of magnitude higher carrier mobilities in comparison with the van der Waals Bi2Se3/graphene heterostructures created employing exfoliation of thin Bi2Se3 layers. The grown heterostructures demonstrated the properties that are perspective for new functional devices, for a variety of signal processing and logic applications.",
author = "Antonova, {I. V.} and Nebogatikova, {N. A.} and Stepina, {N. P.} and Volodin, {V. A.} and Kirienko, {V. V.} and Rybin, {M. G.} and Obrazstova, {E. D.} and Golyashov, {V. A.} and Kokh, {K. A.} and Tereshchenko, {O. E.}",
note = "Funding Information: This work was supported by the RFBR Grant Nos. 18-29-12094 and 19-29-12061, the RSF Grant No. 20-42-08004 in the part of graphene synthesis, and state assignment of IGM SB RAS, ISP SB RAS and FSRG-2020-0017. The Raman spectra were registered using the equipment of the Center of collective usage “VTAN” in the ATRC department of NSU. Publisher Copyright: {\textcopyright} 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.",
year = "2021",
month = may,
doi = "10.1007/s10853-021-05836-y",
language = "English",
volume = "56",
pages = "9330–9343",
journal = "Journal of Materials Science",
issn = "0022-2461",
publisher = "Springer Nature",
number = "15",

}

RIS

TY - JOUR

T1 - Growth of Bi2Se3/graphene heterostructures with the room temperature high carrier mobility

AU - Antonova, I. V.

AU - Nebogatikova, N. A.

AU - Stepina, N. P.

AU - Volodin, V. A.

AU - Kirienko, V. V.

AU - Rybin, M. G.

AU - Obrazstova, E. D.

AU - Golyashov, V. A.

AU - Kokh, K. A.

AU - Tereshchenko, O. E.

N1 - Funding Information: This work was supported by the RFBR Grant Nos. 18-29-12094 and 19-29-12061, the RSF Grant No. 20-42-08004 in the part of graphene synthesis, and state assignment of IGM SB RAS, ISP SB RAS and FSRG-2020-0017. The Raman spectra were registered using the equipment of the Center of collective usage “VTAN” in the ATRC department of NSU. Publisher Copyright: © 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC part of Springer Nature. Copyright: Copyright 2021 Elsevier B.V., All rights reserved.

PY - 2021/5

Y1 - 2021/5

N2 - Heterostructures of Bi2Se3 topological insulators were epitaxially grown on graphene by means of the physical vapor deposition at 500 °C. Micrometer-sized flakes with thickness 1 QL (quintuple layer ~ 1 nm) and films of millimeter-scale with thicknesses 2–6 QL had been grown on CVD graphene. The minimum thickness of large-scaled continuous Bi2Se3 films was found to be ~ 8 QL for the regime used. The heterostructures with a Bi2Se3 film thickness of > 10 QL had resistivity as low as 200–500 Ω/sq and a high room temperature carrier mobility ~ 1000–3400 cm2/Vs in the Bi2Se3/graphene interface channel. Moreover, the coexistence of a p-type graphene-related conductive channel, simultaneously with the n-type conductive surface channel of Bi2Se3, was observed. The improvement of the bottom Bi2Se3/graphene interface with the increase in the growth time clearly manifested itself in the increase of conductivity and carrier mobility in the grown layer. The grown Bi2Se3/G structures have lower resistivities and more than one order of magnitude higher carrier mobilities in comparison with the van der Waals Bi2Se3/graphene heterostructures created employing exfoliation of thin Bi2Se3 layers. The grown heterostructures demonstrated the properties that are perspective for new functional devices, for a variety of signal processing and logic applications.

AB - Heterostructures of Bi2Se3 topological insulators were epitaxially grown on graphene by means of the physical vapor deposition at 500 °C. Micrometer-sized flakes with thickness 1 QL (quintuple layer ~ 1 nm) and films of millimeter-scale with thicknesses 2–6 QL had been grown on CVD graphene. The minimum thickness of large-scaled continuous Bi2Se3 films was found to be ~ 8 QL for the regime used. The heterostructures with a Bi2Se3 film thickness of > 10 QL had resistivity as low as 200–500 Ω/sq and a high room temperature carrier mobility ~ 1000–3400 cm2/Vs in the Bi2Se3/graphene interface channel. Moreover, the coexistence of a p-type graphene-related conductive channel, simultaneously with the n-type conductive surface channel of Bi2Se3, was observed. The improvement of the bottom Bi2Se3/graphene interface with the increase in the growth time clearly manifested itself in the increase of conductivity and carrier mobility in the grown layer. The grown Bi2Se3/G structures have lower resistivities and more than one order of magnitude higher carrier mobilities in comparison with the van der Waals Bi2Se3/graphene heterostructures created employing exfoliation of thin Bi2Se3 layers. The grown heterostructures demonstrated the properties that are perspective for new functional devices, for a variety of signal processing and logic applications.

UR - http://www.scopus.com/inward/record.url?scp=85101023129&partnerID=8YFLogxK

U2 - 10.1007/s10853-021-05836-y

DO - 10.1007/s10853-021-05836-y

M3 - Article

AN - SCOPUS:85101023129

VL - 56

SP - 9330

EP - 9343

JO - Journal of Materials Science

JF - Journal of Materials Science

SN - 0022-2461

IS - 15

ER -

ID: 27877178