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Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: Structure and optical properties. / Volodin, V. A.; Cherkov, A. G.; Antonenko, A. Kh et al.

In: Materials Research Express, Vol. 4, No. 7, 075010, 01.07.2017.

Research output: Contribution to journalArticlepeer-review

Harvard

Volodin, VA, Cherkov, AG, Antonenko, AK, Stoffel, M, Rinnert, H & Vergnat, M 2017, 'Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: Structure and optical properties', Materials Research Express, vol. 4, no. 7, 075010. https://doi.org/10.1088/2053-1591/aa7c38

APA

Volodin, V. A., Cherkov, A. G., Antonenko, A. K., Stoffel, M., Rinnert, H., & Vergnat, M. (2017). Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: Structure and optical properties. Materials Research Express, 4(7), [075010]. https://doi.org/10.1088/2053-1591/aa7c38

Vancouver

Volodin VA, Cherkov AG, Antonenko AK, Stoffel M, Rinnert H, Vergnat M. Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: Structure and optical properties. Materials Research Express. 2017 Jul 1;4(7):075010. doi: 10.1088/2053-1591/aa7c38

Author

Volodin, V. A. ; Cherkov, A. G. ; Antonenko, A. Kh et al. / Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: Structure and optical properties. In: Materials Research Express. 2017 ; Vol. 4, No. 7.

BibTeX

@article{c09cdae267594a778330de8d0e870a58,
title = "Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: Structure and optical properties",
abstract = "Ge(x)[SiO2](1-x) (0.1 ≤ x ≤ 0.4) films were deposited onto Si(0 0 1) or fused quartz substrates using co-evaporation of both Ge and SiO2 in high vacuum. Germanium nanocrystals were synthesized in the SiO2 matrix by furnace annealing of Gex[SiO2](1-x) films with x ≥ 0.2. According to electron microscopy and Raman spectroscopy data, the average size of the nanocrystals depends weakly on the annealing temperature (700, 800, or 900 °C) and on the Ge concentration in the films. Neither amorphous Ge clusters nor Ge nanocrystals were observed in as-deposited and annealed Ge0.1[SiO2]0.9 films. Infrared absorption spectroscopy measurements show that the studied films do not contain a noticeable amount of GeOx clusters. After annealing at 900 °C intermixing of germanium and silicon atoms was still negligible thus preventing the formation of GeSi nanocrystals. For annealed samples, we report the observation of infrared photoluminescence at low temperatures, which can be explained by exciton recombination in Ge nanocrystals. Moreover, we report strong photoluminescence in the visible range at room temperature, which is certainly due to Ge-related defect-induced radiative transitions.",
keywords = "Defects, Ge nanocrystals, Nanoclusters, Photoluminescence, Raman scattering, photoluminescence, SILICON, SIZE, NANOSTRUCTURES, BAND-GAP, ELECTROLUMINESCENCE, RAMAN-SPECTROSCOPY DATA, INFRARED PHOTOLUMINESCENCE, NANOCLUSTERS, nanoclusters, defects, QUANTUM CONFINEMENT, EMISSION",
author = "Volodin, {V. A.} and Cherkov, {A. G.} and Antonenko, {A. Kh} and M. Stoffel and H. Rinnert and M. Vergnat",
year = "2017",
month = jul,
day = "1",
doi = "10.1088/2053-1591/aa7c38",
language = "English",
volume = "4",
journal = "Materials Research Express",
issn = "2053-1591",
publisher = "IOP Publishing Ltd.",
number = "7",

}

RIS

TY - JOUR

T1 - Ge nanocrystals formed by furnace annealing of Ge(x)[SiO2](1-x) films: Structure and optical properties

AU - Volodin, V. A.

AU - Cherkov, A. G.

AU - Antonenko, A. Kh

AU - Stoffel, M.

AU - Rinnert, H.

AU - Vergnat, M.

PY - 2017/7/1

Y1 - 2017/7/1

N2 - Ge(x)[SiO2](1-x) (0.1 ≤ x ≤ 0.4) films were deposited onto Si(0 0 1) or fused quartz substrates using co-evaporation of both Ge and SiO2 in high vacuum. Germanium nanocrystals were synthesized in the SiO2 matrix by furnace annealing of Gex[SiO2](1-x) films with x ≥ 0.2. According to electron microscopy and Raman spectroscopy data, the average size of the nanocrystals depends weakly on the annealing temperature (700, 800, or 900 °C) and on the Ge concentration in the films. Neither amorphous Ge clusters nor Ge nanocrystals were observed in as-deposited and annealed Ge0.1[SiO2]0.9 films. Infrared absorption spectroscopy measurements show that the studied films do not contain a noticeable amount of GeOx clusters. After annealing at 900 °C intermixing of germanium and silicon atoms was still negligible thus preventing the formation of GeSi nanocrystals. For annealed samples, we report the observation of infrared photoluminescence at low temperatures, which can be explained by exciton recombination in Ge nanocrystals. Moreover, we report strong photoluminescence in the visible range at room temperature, which is certainly due to Ge-related defect-induced radiative transitions.

AB - Ge(x)[SiO2](1-x) (0.1 ≤ x ≤ 0.4) films were deposited onto Si(0 0 1) or fused quartz substrates using co-evaporation of both Ge and SiO2 in high vacuum. Germanium nanocrystals were synthesized in the SiO2 matrix by furnace annealing of Gex[SiO2](1-x) films with x ≥ 0.2. According to electron microscopy and Raman spectroscopy data, the average size of the nanocrystals depends weakly on the annealing temperature (700, 800, or 900 °C) and on the Ge concentration in the films. Neither amorphous Ge clusters nor Ge nanocrystals were observed in as-deposited and annealed Ge0.1[SiO2]0.9 films. Infrared absorption spectroscopy measurements show that the studied films do not contain a noticeable amount of GeOx clusters. After annealing at 900 °C intermixing of germanium and silicon atoms was still negligible thus preventing the formation of GeSi nanocrystals. For annealed samples, we report the observation of infrared photoluminescence at low temperatures, which can be explained by exciton recombination in Ge nanocrystals. Moreover, we report strong photoluminescence in the visible range at room temperature, which is certainly due to Ge-related defect-induced radiative transitions.

KW - Defects

KW - Ge nanocrystals

KW - Nanoclusters

KW - Photoluminescence

KW - Raman scattering

KW - photoluminescence

KW - SILICON

KW - SIZE

KW - NANOSTRUCTURES

KW - BAND-GAP

KW - ELECTROLUMINESCENCE

KW - RAMAN-SPECTROSCOPY DATA

KW - INFRARED PHOTOLUMINESCENCE

KW - NANOCLUSTERS

KW - nanoclusters

KW - defects

KW - QUANTUM CONFINEMENT

KW - EMISSION

UR - http://www.scopus.com/inward/record.url?scp=85027143501&partnerID=8YFLogxK

U2 - 10.1088/2053-1591/aa7c38

DO - 10.1088/2053-1591/aa7c38

M3 - Article

AN - SCOPUS:85027143501

VL - 4

JO - Materials Research Express

JF - Materials Research Express

SN - 2053-1591

IS - 7

M1 - 075010

ER -

ID: 9965708