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Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface. / Milakhin, D. S.; Malin, T. V.; Mansurov, V. G. et al.

In: Physics of the Solid State, Vol. 61, No. 12, 12.2019, p. 2329-2334.

Research output: Contribution to journal › Article › peer-review

Harvard

Milakhin, DS, Malin, TV, Mansurov, VG, Galitsyn, YG, Kozhukhov, AS, Aleksandrov, IA, Rzheutski, NV, Lebiadok, EV, Razumets, EA & Zhuravlev, KS 2019, 'Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface', Physics of the Solid State, vol. 61, no. 12, pp. 2329-2334. https://doi.org/10.1134/S1063783419120308

APA

Milakhin, D. S., Malin, T. V., Mansurov, V. G., Galitsyn, Y. G., Kozhukhov, A. S., Aleksandrov, I. A., Rzheutski, N. V., Lebiadok, E. V., Razumets, E. A., & Zhuravlev, K. S. (2019). Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface. Physics of the Solid State, 61(12), 2329-2334. https://doi.org/10.1134/S1063783419120308

Vancouver

Milakhin DS, Malin TV, Mansurov VG, Galitsyn YG, Kozhukhov AS, Aleksandrov IA et al. Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface. Physics of the Solid State. 2019 Dec;61(12):2329-2334. doi: 10.1134/S1063783419120308

Author

Milakhin, D. S. ; Malin, T. V. ; Mansurov, V. G. et al. / Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface. In: Physics of the Solid State. 2019 ; Vol. 61, No. 12. pp. 2329-2334.

BibTeX

@article{0dc91a4d2aa44eadac9d2856a8a63409,
title = "Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface",
abstract = "The formation of GaN nanocrystals on the graphene-like AlN (g-AlN) modification and graphene-like (g-Si3N3) silicon nitride by ammonia molecular beam epitaxy has been investigated. It has been found that the GaN growth on the g-Si3N3 surface leads to the formation of misoriented nanocrystals. During the GaN growth on the g-AlN surface, the epitaxial growth of similarly oriented GaN quantum dots of the graphite-like modification has been observed. The lattice parameters and energy structure of two graphite-like GaN modifications with the alternating AB (graphite structure) and AA(+) (hexagonal boron nitride structure) layers have been calculated.",
keywords = "GaN nanocrystals, graphene-like layers, g-AlN, g-Si3N3, ammonia molecular beam epitaxy, LUMINESCENCE, SILICON",
author = "Milakhin, {D. S.} and Malin, {T. V.} and Mansurov, {V. G.} and Galitsyn, {Yu. G.} and Kozhukhov, {A. S.} and Aleksandrov, {I. A.} and Rzheutski, {N. V.} and Lebiadok, {E. V.} and Razumets, {E. A.} and Zhuravlev, {K. S.}",
year = "2019",
month = dec,
doi = "10.1134/S1063783419120308",
language = "English",
volume = "61",
pages = "2329--2334",
journal = "Physics of the Solid State",
issn = "1063-7834",
publisher = "PLEIADES PUBLISHING INC",
number = "12",

}

RIS

TY - JOUR

T1 - Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface

AU - Milakhin, D. S.

AU - Malin, T. V.

AU - Mansurov, V. G.

AU - Galitsyn, Yu. G.

AU - Kozhukhov, A. S.

AU - Aleksandrov, I. A.

AU - Rzheutski, N. V.

AU - Lebiadok, E. V.

AU - Razumets, E. A.

AU - Zhuravlev, K. S.

PY - 2019/12

Y1 - 2019/12

N2 - The formation of GaN nanocrystals on the graphene-like AlN (g-AlN) modification and graphene-like (g-Si3N3) silicon nitride by ammonia molecular beam epitaxy has been investigated. It has been found that the GaN growth on the g-Si3N3 surface leads to the formation of misoriented nanocrystals. During the GaN growth on the g-AlN surface, the epitaxial growth of similarly oriented GaN quantum dots of the graphite-like modification has been observed. The lattice parameters and energy structure of two graphite-like GaN modifications with the alternating AB (graphite structure) and AA(+) (hexagonal boron nitride structure) layers have been calculated.

AB - The formation of GaN nanocrystals on the graphene-like AlN (g-AlN) modification and graphene-like (g-Si3N3) silicon nitride by ammonia molecular beam epitaxy has been investigated. It has been found that the GaN growth on the g-Si3N3 surface leads to the formation of misoriented nanocrystals. During the GaN growth on the g-AlN surface, the epitaxial growth of similarly oriented GaN quantum dots of the graphite-like modification has been observed. The lattice parameters and energy structure of two graphite-like GaN modifications with the alternating AB (graphite structure) and AA(+) (hexagonal boron nitride structure) layers have been calculated.

KW - GaN nanocrystals

KW - graphene-like layers

KW - g-AlN

KW - g-Si3N3

KW - ammonia molecular beam epitaxy

KW - LUMINESCENCE

KW - SILICON

U2 - 10.1134/S1063783419120308

DO - 10.1134/S1063783419120308

M3 - Article

VL - 61

SP - 2329

EP - 2334

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 12

ER -

ID: 24298375