Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface › Research Explorer

DOI

https://doi.org/10.1134/S1063783419120308
Final published version

D. S. Milakhin
T. V. Malin
V. G. Mansurov
Yu. G. Galitsyn
A. S. Kozhukhov
I. A. Aleksandrov
N. V. Rzheutski
E. V. Lebiadok
E. A. Razumets
K. S. Zhuravlev

Original language	English
Pages (from-to)	2329-2334
Number of pages	6
Journal	Physics of the Solid State
Volume	61
Issue number	12
DOIs	https://doi.org/10.1134/S1063783419120308
Publication status	Published - Dec 2019

Research areas

GaN nanocrystals, graphene-like layers, g-AlN, g-Si3N3, ammonia molecular beam epitaxy, LUMINESCENCE, SILICON

OECD FOS+WOS

ID: 24298375