TY - JOUR

T1 - Forming the GaN Nanocrystals on the Graphene-Like g-AlN and g-Si3N3 Surface

AU - Milakhin, D. S.

AU - Malin, T. V.

AU - Mansurov, V. G.

AU - Galitsyn, Yu. G.

AU - Kozhukhov, A. S.

AU - Aleksandrov, I. A.

AU - Rzheutski, N. V.

AU - Lebiadok, E. V.

AU - Razumets, E. A.

AU - Zhuravlev, K. S.

PY - 2019/12

Y1 - 2019/12

N2 - The formation of GaN nanocrystals on the graphene-like AlN (g-AlN) modification and graphene-like (g-Si3N3) silicon nitride by ammonia molecular beam epitaxy has been investigated. It has been found that the GaN growth on the g-Si3N3 surface leads to the formation of misoriented nanocrystals. During the GaN growth on the g-AlN surface, the epitaxial growth of similarly oriented GaN quantum dots of the graphite-like modification has been observed. The lattice parameters and energy structure of two graphite-like GaN modifications with the alternating AB (graphite structure) and AA(+) (hexagonal boron nitride structure) layers have been calculated.

AB - The formation of GaN nanocrystals on the graphene-like AlN (g-AlN) modification and graphene-like (g-Si3N3) silicon nitride by ammonia molecular beam epitaxy has been investigated. It has been found that the GaN growth on the g-Si3N3 surface leads to the formation of misoriented nanocrystals. During the GaN growth on the g-AlN surface, the epitaxial growth of similarly oriented GaN quantum dots of the graphite-like modification has been observed. The lattice parameters and energy structure of two graphite-like GaN modifications with the alternating AB (graphite structure) and AA(+) (hexagonal boron nitride structure) layers have been calculated.

KW - GaN nanocrystals

KW - graphene-like layers

KW - g-AlN

KW - g-Si3N3

KW - ammonia molecular beam epitaxy

KW - LUMINESCENCE

KW - SILICON

U2 - 10.1134/S1063783419120308

DO - 10.1134/S1063783419120308

M3 - Article

VL - 61

SP - 2329

EP - 2334

JO - Physics of the Solid State

JF - Physics of the Solid State

SN - 1063-7834

IS - 12

ER -