Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

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Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties. / Klimov, A. E.; Akimov, A. N.; Akhundov, I. O. et al.

In: Semiconductors, Vol. 54, No. 10, 01.10.2020, p. 1325-1331.

Research output: Contribution to journal › Article › peer-review

BibTeX

@article{32d534628b414060a0aa863314b2d3e2,

title = "Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties",

abstract = "The characteristics of metal-insulator-semiconductor (MIS) structures based on insulating PbSnTe:In films with compositions in the vicinity of band inversion grown by molecular-beam epitaxy (MBE) are studied. It is shown that a number of features of the films can be due to a ferroelectric phase transition with a Curie temperature in the range of about T ≈ 15–20 K.",

keywords = "ferroelectric phase transition, field effect, MIS structure, PbSnTe:In solid solution, SOLID-SOLUTIONS, PbSnTe, In solid solution",

author = "Klimov, {A. E.} and Akimov, {A. N.} and Akhundov, {I. O.} and Golyashov, {V. A.} and Gorshkov, {D. V.} and Ishchenko, {D. V.} and Matyushenko, {E. V.} and Neizvestny, {I. G.} and Sidorov, {G. Yu} and Suprun, {S. P.} and Tarasov, {A. S.} and Tereshchenko, {O. E.} and Epov, {V. S.}",

year = "2020",

month = oct,

day = "1",

doi = "10.1134/S1063782620100164",

language = "English",

volume = "54",

pages = "1325--1331",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "PLEIADES PUBLISHING INC",

number = "10",

}

RIS

TY - JOUR

T1 - Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties

AU - Klimov, A. E.

AU - Akimov, A. N.

AU - Akhundov, I. O.

AU - Golyashov, V. A.

AU - Gorshkov, D. V.

AU - Ishchenko, D. V.

AU - Matyushenko, E. V.

AU - Neizvestny, I. G.

AU - Sidorov, G. Yu

AU - Suprun, S. P.

AU - Tarasov, A. S.

AU - Tereshchenko, O. E.

AU - Epov, V. S.

PY - 2020/10/1

Y1 - 2020/10/1

N2 - The characteristics of metal-insulator-semiconductor (MIS) structures based on insulating PbSnTe:In films with compositions in the vicinity of band inversion grown by molecular-beam epitaxy (MBE) are studied. It is shown that a number of features of the films can be due to a ferroelectric phase transition with a Curie temperature in the range of about T ≈ 15–20 K.

AB - The characteristics of metal-insulator-semiconductor (MIS) structures based on insulating PbSnTe:In films with compositions in the vicinity of band inversion grown by molecular-beam epitaxy (MBE) are studied. It is shown that a number of features of the films can be due to a ferroelectric phase transition with a Curie temperature in the range of about T ≈ 15–20 K.

KW - ferroelectric phase transition

KW - field effect

KW - MIS structure

KW - PbSnTe:In solid solution

KW - SOLID-SOLUTIONS

KW - PbSnTe

KW - In solid solution

UR - http://www.scopus.com/inward/record.url?scp=85092354413&partnerID=8YFLogxK

U2 - 10.1134/S1063782620100164

DO - 10.1134/S1063782620100164

M3 - Article

AN - SCOPUS:85092354413

VL - 54

SP - 1325

EP - 1331

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 10

ER -

ID: 25675814