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Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures. / Zhuravlev, K.; Mansurov, V.; Galitsyn, Yu et al.

In: Semiconductor Science and Technology, Vol. 35, No. 7, 075004, 28.05.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Zhuravlev, K, Mansurov, V, Galitsyn, Y, Malin, T, Milakhin, D & Zemlyakov, V 2020, 'Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures', Semiconductor Science and Technology, vol. 35, no. 7, 075004. https://doi.org/10.1088/1361-6641/ab7e44

APA

Zhuravlev, K., Mansurov, V., Galitsyn, Y., Malin, T., Milakhin, D., & Zemlyakov, V. (2020). Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures. Semiconductor Science and Technology, 35(7), [075004]. https://doi.org/10.1088/1361-6641/ab7e44

Vancouver

Zhuravlev K, Mansurov V, Galitsyn Y, Malin T, Milakhin D, Zemlyakov V. Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures. Semiconductor Science and Technology. 2020 May 28;35(7):075004. doi: 10.1088/1361-6641/ab7e44

Author

Zhuravlev, K. ; Mansurov, V. ; Galitsyn, Yu et al. / Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures. In: Semiconductor Science and Technology. 2020 ; Vol. 35, No. 7.

BibTeX

@article{910d2120f4d94cf88a01a7acd04181f4,
title = "Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures",
abstract = "The effect of a monolayer thick SiN film on the surface states of the AlN/GaN heterostructure grown by molecular beam epitaxy was investigated. It was revealed that the submonolayer SiN coating of the AlN surface leads to the formation of an ordered (√3 × √3)R30° structure. Further SiN film growth results in a Si-enriched SiN amorphous film formation. The Fermi level, pinned 1 eV above the valence band maximum of as-grown AlN, jumps 2.3 eV when (√3 × √3)R30° is formed, and then gradually goes to 3.1 eV with an increase in the thickness of the SiN film up to four monolayers. This is explained by the evolution of surface states, as well as the appearance of donor-like states in a Si-enriched SiN film. The presence of donor-like states was confirmed when studying the effect of current collapse in enhancement-mode high electron mobility transistors made of SiN/AlN/GaN heterostructures.",
keywords = "AlN/GaN heterostructure, current collapse, GaN-enhancement-mode high electron mobility transistor (E-HEMT), SiN-passivation, surface states, POWER PERFORMANCE, AlN, SEMICONDUCTOR, PASSIVATION, GaN-enhancement-mode high electron, GAN(0001) SURFACE, MODEL, CURRENT COLLAPSE, ALGAN/GAN, mobility transistor (E-HEMT), GaN heterostructure, HEMTS, SCANNING-TUNNELING-MICROSCOPY, CHARGE",
author = "K. Zhuravlev and V. Mansurov and Yu Galitsyn and T. Malin and D. Milakhin and V. Zemlyakov",
year = "2020",
month = may,
day = "28",
doi = "10.1088/1361-6641/ab7e44",
language = "English",
volume = "35",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "7",

}

RIS

TY - JOUR

T1 - Evolution of the surface states during the in situ SiN layer formation on AlN/GaN heterostructures

AU - Zhuravlev, K.

AU - Mansurov, V.

AU - Galitsyn, Yu

AU - Malin, T.

AU - Milakhin, D.

AU - Zemlyakov, V.

PY - 2020/5/28

Y1 - 2020/5/28

N2 - The effect of a monolayer thick SiN film on the surface states of the AlN/GaN heterostructure grown by molecular beam epitaxy was investigated. It was revealed that the submonolayer SiN coating of the AlN surface leads to the formation of an ordered (√3 × √3)R30° structure. Further SiN film growth results in a Si-enriched SiN amorphous film formation. The Fermi level, pinned 1 eV above the valence band maximum of as-grown AlN, jumps 2.3 eV when (√3 × √3)R30° is formed, and then gradually goes to 3.1 eV with an increase in the thickness of the SiN film up to four monolayers. This is explained by the evolution of surface states, as well as the appearance of donor-like states in a Si-enriched SiN film. The presence of donor-like states was confirmed when studying the effect of current collapse in enhancement-mode high electron mobility transistors made of SiN/AlN/GaN heterostructures.

AB - The effect of a monolayer thick SiN film on the surface states of the AlN/GaN heterostructure grown by molecular beam epitaxy was investigated. It was revealed that the submonolayer SiN coating of the AlN surface leads to the formation of an ordered (√3 × √3)R30° structure. Further SiN film growth results in a Si-enriched SiN amorphous film formation. The Fermi level, pinned 1 eV above the valence band maximum of as-grown AlN, jumps 2.3 eV when (√3 × √3)R30° is formed, and then gradually goes to 3.1 eV with an increase in the thickness of the SiN film up to four monolayers. This is explained by the evolution of surface states, as well as the appearance of donor-like states in a Si-enriched SiN film. The presence of donor-like states was confirmed when studying the effect of current collapse in enhancement-mode high electron mobility transistors made of SiN/AlN/GaN heterostructures.

KW - AlN/GaN heterostructure

KW - current collapse

KW - GaN-enhancement-mode high electron mobility transistor (E-HEMT)

KW - SiN-passivation

KW - surface states

KW - POWER PERFORMANCE

KW - AlN

KW - SEMICONDUCTOR

KW - PASSIVATION

KW - GaN-enhancement-mode high electron

KW - GAN(0001) SURFACE

KW - MODEL

KW - CURRENT COLLAPSE

KW - ALGAN/GAN

KW - mobility transistor (E-HEMT)

KW - GaN heterostructure

KW - HEMTS

KW - SCANNING-TUNNELING-MICROSCOPY

KW - CHARGE

UR - http://www.scopus.com/inward/record.url?scp=85086598117&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/ab7e44

DO - 10.1088/1361-6641/ab7e44

M3 - Article

AN - SCOPUS:85086598117

VL - 35

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 7

M1 - 075004

ER -

ID: 24538134