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Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application. / Perevalov, T. V.; Volodin, V. A.; Kamaev, G. N. et al.

In: Journal of Non-Crystalline Solids, Vol. 598, 121925, 15.12.2022.

Research output: Contribution to journal › Article › peer-review

Harvard

Perevalov, TV, Volodin, VA, Kamaev, GN, Gismatulin, AA, Cherkova, SG, Prosvirin, IP, Astankova, KN & Gritsenko, VA 2022, 'Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application', Journal of Non-Crystalline Solids, vol. 598, 121925. https://doi.org/10.1016/j.jnoncrysol.2022.121925

APA

Perevalov, T. V., Volodin, V. A., Kamaev, G. N., Gismatulin, A. A., Cherkova, S. G., Prosvirin, I. P., Astankova, K. N., & Gritsenko, V. A. (2022). Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application. Journal of Non-Crystalline Solids, 598, [121925]. https://doi.org/10.1016/j.jnoncrysol.2022.121925

Vancouver

Perevalov TV, Volodin VA, Kamaev GN, Gismatulin AA, Cherkova SG, Prosvirin IP et al. Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application. Journal of Non-Crystalline Solids. 2022 Dec 15;598:121925. doi: 10.1016/j.jnoncrysol.2022.121925

Author

Perevalov, T. V. ; Volodin, V. A. ; Kamaev, G. N. et al. / Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application. In: Journal of Non-Crystalline Solids. 2022 ; Vol. 598.

BibTeX

@article{575136b04960405c946270a2c70ef75c,
title = "Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application",
abstract = "The electronic structure and optical properties of SiOxNy:H films enriched with silicon obtained by plasma-enhanced chemical deposition are studied. It is shown, that with the plasma generator power growth, the content of silicon (amorphous silicon clusters) and oxygen decreases, whereas the nitrogen content increases. Thus, the SiOxNy:H film composition can be effectively varied both by changing the gas flow ratio in the growth chamber and by changing the plasma generator power. The electronic stricture of SiOxNy of various x and y values is calculated from the first principles for the model structures, and the energy diagram, as well as the bandgap dependence on the oxygen content, is obtained. It is found that p+-Si/SiOxNy:H/Ni structures, have the properties of memristor bipolar type: they are reversibly switched between high and low resistance states. These memristors are forming-free: the initial state has a close resistance to the low resistance state.",
keywords = "Chemical vapor deposition, Electronic structure, FTIR, Memristors, Silicon oxynitride, XPS",
author = "Perevalov, {T. V.} and Volodin, {V. A.} and Kamaev, {G. N.} and Gismatulin, {A. A.} and Cherkova, {S. G.} and Prosvirin, {I. P.} and Astankova, {K. N.} and Gritsenko, {V. A.}",
note = "Funding Information: The work was supported by the Russian Science Foundation , project No. 22–19–00369 . The electrophysical measurements and measurements of Raman spectra are done on the equipment of the Center of Collective Usage “VTAN” NSU supported by the Ministry of Education and Science of Russia by agreement #075–12–2021–697 . The ab initio simulations were carried out at the NSU Supercomputer Center. Publisher Copyright: {\textcopyright} 2022",
year = "2022",
month = dec,
day = "15",
doi = "10.1016/j.jnoncrysol.2022.121925",
language = "English",
volume = "598",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application

AU - Perevalov, T. V.

AU - Volodin, V. A.

AU - Kamaev, G. N.

AU - Gismatulin, A. A.

AU - Cherkova, S. G.

AU - Prosvirin, I. P.

AU - Astankova, K. N.

AU - Gritsenko, V. A.

N1 - Funding Information: The work was supported by the Russian Science Foundation , project No. 22–19–00369 . The electrophysical measurements and measurements of Raman spectra are done on the equipment of the Center of Collective Usage “VTAN” NSU supported by the Ministry of Education and Science of Russia by agreement #075–12–2021–697 . The ab initio simulations were carried out at the NSU Supercomputer Center. Publisher Copyright: © 2022

PY - 2022/12/15

Y1 - 2022/12/15

N2 - The electronic structure and optical properties of SiOxNy:H films enriched with silicon obtained by plasma-enhanced chemical deposition are studied. It is shown, that with the plasma generator power growth, the content of silicon (amorphous silicon clusters) and oxygen decreases, whereas the nitrogen content increases. Thus, the SiOxNy:H film composition can be effectively varied both by changing the gas flow ratio in the growth chamber and by changing the plasma generator power. The electronic stricture of SiOxNy of various x and y values is calculated from the first principles for the model structures, and the energy diagram, as well as the bandgap dependence on the oxygen content, is obtained. It is found that p+-Si/SiOxNy:H/Ni structures, have the properties of memristor bipolar type: they are reversibly switched between high and low resistance states. These memristors are forming-free: the initial state has a close resistance to the low resistance state.

AB - The electronic structure and optical properties of SiOxNy:H films enriched with silicon obtained by plasma-enhanced chemical deposition are studied. It is shown, that with the plasma generator power growth, the content of silicon (amorphous silicon clusters) and oxygen decreases, whereas the nitrogen content increases. Thus, the SiOxNy:H film composition can be effectively varied both by changing the gas flow ratio in the growth chamber and by changing the plasma generator power. The electronic stricture of SiOxNy of various x and y values is calculated from the first principles for the model structures, and the energy diagram, as well as the bandgap dependence on the oxygen content, is obtained. It is found that p+-Si/SiOxNy:H/Ni structures, have the properties of memristor bipolar type: they are reversibly switched between high and low resistance states. These memristors are forming-free: the initial state has a close resistance to the low resistance state.

KW - Chemical vapor deposition

KW - Electronic structure

KW - FTIR

KW - Memristors

KW - Silicon oxynitride

KW - XPS

UR - http://www.scopus.com/inward/record.url?scp=85139596241&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2022.121925

DO - 10.1016/j.jnoncrysol.2022.121925

M3 - Article

AN - SCOPUS:85139596241

VL - 598

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

M1 - 121925

ER -

ID: 38163513