Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	121925
Number of pages	8
Journal	Journal of Non-Crystalline Solids
Volume	598
DOIs	https://doi.org/10.1016/j.jnoncrysol.2022.121925
Publication status	Published - 15 Dec 2022

Chemical vapor deposition, Electronic structure, FTIR, Memristors, Silicon oxynitride, XPS

ID: 38163513