Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application. / Perevalov, T. V.; Volodin, V. A.; Kamaev, G. N. и др.
в: Journal of Non-Crystalline Solids, Том 598, 121925, 15.12.2022.Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование
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TY - JOUR
T1 - Electronic structure of silicon oxynitride films grown by plasma-enhanced chemical vapor deposition for memristor application
AU - Perevalov, T. V.
AU - Volodin, V. A.
AU - Kamaev, G. N.
AU - Gismatulin, A. A.
AU - Cherkova, S. G.
AU - Prosvirin, I. P.
AU - Astankova, K. N.
AU - Gritsenko, V. A.
N1 - Funding Information: The work was supported by the Russian Science Foundation , project No. 22–19–00369 . The electrophysical measurements and measurements of Raman spectra are done on the equipment of the Center of Collective Usage “VTAN” NSU supported by the Ministry of Education and Science of Russia by agreement #075–12–2021–697 . The ab initio simulations were carried out at the NSU Supercomputer Center. Publisher Copyright: © 2022
PY - 2022/12/15
Y1 - 2022/12/15
N2 - The electronic structure and optical properties of SiOxNy:H films enriched with silicon obtained by plasma-enhanced chemical deposition are studied. It is shown, that with the plasma generator power growth, the content of silicon (amorphous silicon clusters) and oxygen decreases, whereas the nitrogen content increases. Thus, the SiOxNy:H film composition can be effectively varied both by changing the gas flow ratio in the growth chamber and by changing the plasma generator power. The electronic stricture of SiOxNy of various x and y values is calculated from the first principles for the model structures, and the energy diagram, as well as the bandgap dependence on the oxygen content, is obtained. It is found that p+-Si/SiOxNy:H/Ni structures, have the properties of memristor bipolar type: they are reversibly switched between high and low resistance states. These memristors are forming-free: the initial state has a close resistance to the low resistance state.
AB - The electronic structure and optical properties of SiOxNy:H films enriched with silicon obtained by plasma-enhanced chemical deposition are studied. It is shown, that with the plasma generator power growth, the content of silicon (amorphous silicon clusters) and oxygen decreases, whereas the nitrogen content increases. Thus, the SiOxNy:H film composition can be effectively varied both by changing the gas flow ratio in the growth chamber and by changing the plasma generator power. The electronic stricture of SiOxNy of various x and y values is calculated from the first principles for the model structures, and the energy diagram, as well as the bandgap dependence on the oxygen content, is obtained. It is found that p+-Si/SiOxNy:H/Ni structures, have the properties of memristor bipolar type: they are reversibly switched between high and low resistance states. These memristors are forming-free: the initial state has a close resistance to the low resistance state.
KW - Chemical vapor deposition
KW - Electronic structure
KW - FTIR
KW - Memristors
KW - Silicon oxynitride
KW - XPS
UR - http://www.scopus.com/inward/record.url?scp=85139596241&partnerID=8YFLogxK
U2 - 10.1016/j.jnoncrysol.2022.121925
DO - 10.1016/j.jnoncrysol.2022.121925
M3 - Article
AN - SCOPUS:85139596241
VL - 598
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
M1 - 121925
ER -
ID: 38163513