Research output: Contribution to journal › Article › peer-review
Electronic structure of nitrogen-and phosphorus-doped graphenes grown by chemical vapor deposition method. / Bulusheva, L. G.; Arkhipov, V. E.; Popov, K. M. et al.
In: Materials, Vol. 13, No. 5, 1173, 06.03.2020.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Electronic structure of nitrogen-and phosphorus-doped graphenes grown by chemical vapor deposition method
AU - Bulusheva, L. G.
AU - Arkhipov, V. E.
AU - Popov, K. M.
AU - Sysoev, V. I.
AU - Makarova, A. A.
AU - Okotrub, A. V.
PY - 2020/3/6
Y1 - 2020/3/6
N2 - Heteroatom doping is a widely used method for the modification of the electronic and chemical properties of graphene. A low-pressure chemical vapor deposition technique (CVD) is used here to grow pure, nitrogen-doped and phosphorous-doped few-layer graphene films from methane, acetonitrile and methane-phosphine mixture, respectively. The electronic structure of the films transferred onto SiO2/Si wafers by wet etching of copper substrates is studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy using a synchrotron radiation source. Annealing in an ultra-high vacuum at ca. 773 K allows for the removal of impurities formed on the surface of films during the synthesis and transfer procedure and changes the chemical state of nitrogen in nitrogen-doped graphene. Core level XPS spectra detect a low n-type doping of graphene film when nitrogen or phosphorous atoms are incorporated in the lattice. The electrical sheet resistance increases in the order: graphene < P-graphene < N-graphene. This tendency is related to the density of defects evaluated from the ratio of intensities of Raman peaks, valence band XPS and NEXAFS spectroscopy data.
AB - Heteroatom doping is a widely used method for the modification of the electronic and chemical properties of graphene. A low-pressure chemical vapor deposition technique (CVD) is used here to grow pure, nitrogen-doped and phosphorous-doped few-layer graphene films from methane, acetonitrile and methane-phosphine mixture, respectively. The electronic structure of the films transferred onto SiO2/Si wafers by wet etching of copper substrates is studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy using a synchrotron radiation source. Annealing in an ultra-high vacuum at ca. 773 K allows for the removal of impurities formed on the surface of films during the synthesis and transfer procedure and changes the chemical state of nitrogen in nitrogen-doped graphene. Core level XPS spectra detect a low n-type doping of graphene film when nitrogen or phosphorous atoms are incorporated in the lattice. The electrical sheet resistance increases in the order: graphene < P-graphene < N-graphene. This tendency is related to the density of defects evaluated from the ratio of intensities of Raman peaks, valence band XPS and NEXAFS spectroscopy data.
KW - CVD
KW - Doping
KW - Electronic structure
KW - Few-layer graphene
KW - Nitrogen
KW - Phosphorus
KW - Resistivity
KW - LITHIUM INTERACTION
KW - GRAPHITIC MATERIAL
KW - SINGLE
KW - nitrogen
KW - doping
KW - PARAMETERS
KW - CARBON NANOTUBES
KW - FILMS
KW - electronic structure
KW - RAY PHOTOELECTRON-SPECTROSCOPY
KW - CHEMISTRY
KW - MONOLAYER
KW - few-layer graphene
KW - PRECURSORS
KW - phosphorus
KW - resistivity
UR - http://www.scopus.com/inward/record.url?scp=85081595106&partnerID=8YFLogxK
U2 - 10.3390/ma13051173
DO - 10.3390/ma13051173
M3 - Article
C2 - 32155705
AN - SCOPUS:85081595106
VL - 13
JO - Materials
JF - Materials
SN - 1996-1944
IS - 5
M1 - 1173
ER -
ID: 23802227