Standard

Electronic structure of nitrogen-and phosphorus-doped graphenes grown by chemical vapor deposition method. / Bulusheva, L. G.; Arkhipov, V. E.; Popov, K. M. и др.

в: Materials, Том 13, № 5, 1173, 06.03.2020.

Результаты исследований: Научные публикации в периодических изданияхстатьяРецензирование

Harvard

Bulusheva, LG, Arkhipov, VE, Popov, KM, Sysoev, VI, Makarova, AA & Okotrub, AV 2020, 'Electronic structure of nitrogen-and phosphorus-doped graphenes grown by chemical vapor deposition method', Materials, Том. 13, № 5, 1173. https://doi.org/10.3390/ma13051173

APA

Bulusheva, L. G., Arkhipov, V. E., Popov, K. M., Sysoev, V. I., Makarova, A. A., & Okotrub, A. V. (2020). Electronic structure of nitrogen-and phosphorus-doped graphenes grown by chemical vapor deposition method. Materials, 13(5), [1173]. https://doi.org/10.3390/ma13051173

Vancouver

Bulusheva LG, Arkhipov VE, Popov KM, Sysoev VI, Makarova AA, Okotrub AV. Electronic structure of nitrogen-and phosphorus-doped graphenes grown by chemical vapor deposition method. Materials. 2020 март 6;13(5):1173. doi: 10.3390/ma13051173

Author

Bulusheva, L. G. ; Arkhipov, V. E. ; Popov, K. M. и др. / Electronic structure of nitrogen-and phosphorus-doped graphenes grown by chemical vapor deposition method. в: Materials. 2020 ; Том 13, № 5.

BibTeX

@article{d038050f219547e082f760ad88eeb8ef,
title = "Electronic structure of nitrogen-and phosphorus-doped graphenes grown by chemical vapor deposition method",
abstract = "Heteroatom doping is a widely used method for the modification of the electronic and chemical properties of graphene. A low-pressure chemical vapor deposition technique (CVD) is used here to grow pure, nitrogen-doped and phosphorous-doped few-layer graphene films from methane, acetonitrile and methane-phosphine mixture, respectively. The electronic structure of the films transferred onto SiO2/Si wafers by wet etching of copper substrates is studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy using a synchrotron radiation source. Annealing in an ultra-high vacuum at ca. 773 K allows for the removal of impurities formed on the surface of films during the synthesis and transfer procedure and changes the chemical state of nitrogen in nitrogen-doped graphene. Core level XPS spectra detect a low n-type doping of graphene film when nitrogen or phosphorous atoms are incorporated in the lattice. The electrical sheet resistance increases in the order: graphene < P-graphene < N-graphene. This tendency is related to the density of defects evaluated from the ratio of intensities of Raman peaks, valence band XPS and NEXAFS spectroscopy data.",
keywords = "CVD, Doping, Electronic structure, Few-layer graphene, Nitrogen, Phosphorus, Resistivity, LITHIUM INTERACTION, GRAPHITIC MATERIAL, SINGLE, nitrogen, doping, PARAMETERS, CARBON NANOTUBES, FILMS, electronic structure, RAY PHOTOELECTRON-SPECTROSCOPY, CHEMISTRY, MONOLAYER, few-layer graphene, PRECURSORS, phosphorus, resistivity",
author = "Bulusheva, {L. G.} and Arkhipov, {V. E.} and Popov, {K. M.} and Sysoev, {V. I.} and Makarova, {A. A.} and Okotrub, {A. V.}",
year = "2020",
month = mar,
day = "6",
doi = "10.3390/ma13051173",
language = "English",
volume = "13",
journal = "Materials",
issn = "1996-1944",
publisher = "MDPI AG",
number = "5",

}

RIS

TY - JOUR

T1 - Electronic structure of nitrogen-and phosphorus-doped graphenes grown by chemical vapor deposition method

AU - Bulusheva, L. G.

AU - Arkhipov, V. E.

AU - Popov, K. M.

AU - Sysoev, V. I.

AU - Makarova, A. A.

AU - Okotrub, A. V.

PY - 2020/3/6

Y1 - 2020/3/6

N2 - Heteroatom doping is a widely used method for the modification of the electronic and chemical properties of graphene. A low-pressure chemical vapor deposition technique (CVD) is used here to grow pure, nitrogen-doped and phosphorous-doped few-layer graphene films from methane, acetonitrile and methane-phosphine mixture, respectively. The electronic structure of the films transferred onto SiO2/Si wafers by wet etching of copper substrates is studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy using a synchrotron radiation source. Annealing in an ultra-high vacuum at ca. 773 K allows for the removal of impurities formed on the surface of films during the synthesis and transfer procedure and changes the chemical state of nitrogen in nitrogen-doped graphene. Core level XPS spectra detect a low n-type doping of graphene film when nitrogen or phosphorous atoms are incorporated in the lattice. The electrical sheet resistance increases in the order: graphene < P-graphene < N-graphene. This tendency is related to the density of defects evaluated from the ratio of intensities of Raman peaks, valence band XPS and NEXAFS spectroscopy data.

AB - Heteroatom doping is a widely used method for the modification of the electronic and chemical properties of graphene. A low-pressure chemical vapor deposition technique (CVD) is used here to grow pure, nitrogen-doped and phosphorous-doped few-layer graphene films from methane, acetonitrile and methane-phosphine mixture, respectively. The electronic structure of the films transferred onto SiO2/Si wafers by wet etching of copper substrates is studied by X-ray photoelectron spectroscopy (XPS) and near-edge X-ray absorption fine structure (NEXAFS) spectroscopy using a synchrotron radiation source. Annealing in an ultra-high vacuum at ca. 773 K allows for the removal of impurities formed on the surface of films during the synthesis and transfer procedure and changes the chemical state of nitrogen in nitrogen-doped graphene. Core level XPS spectra detect a low n-type doping of graphene film when nitrogen or phosphorous atoms are incorporated in the lattice. The electrical sheet resistance increases in the order: graphene < P-graphene < N-graphene. This tendency is related to the density of defects evaluated from the ratio of intensities of Raman peaks, valence band XPS and NEXAFS spectroscopy data.

KW - CVD

KW - Doping

KW - Electronic structure

KW - Few-layer graphene

KW - Nitrogen

KW - Phosphorus

KW - Resistivity

KW - LITHIUM INTERACTION

KW - GRAPHITIC MATERIAL

KW - SINGLE

KW - nitrogen

KW - doping

KW - PARAMETERS

KW - CARBON NANOTUBES

KW - FILMS

KW - electronic structure

KW - RAY PHOTOELECTRON-SPECTROSCOPY

KW - CHEMISTRY

KW - MONOLAYER

KW - few-layer graphene

KW - PRECURSORS

KW - phosphorus

KW - resistivity

UR - http://www.scopus.com/inward/record.url?scp=85081595106&partnerID=8YFLogxK

U2 - 10.3390/ma13051173

DO - 10.3390/ma13051173

M3 - Article

C2 - 32155705

AN - SCOPUS:85081595106

VL - 13

JO - Materials

JF - Materials

SN - 1996-1944

IS - 5

M1 - 1173

ER -

ID: 23802227