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Electronic structure of nitrogen-and phosphorus-doped graphenes grown by chemical vapor deposition method

Research output: Contribution to journal › Article › peer-review

DOI

https://doi.org/10.3390/ma13051173
Final published version

L. G. Bulusheva
V. E. Arkhipov
K. M. Popov
V. I. Sysoev
A. A. Makarova
A. V. Okotrub

Original language	English
Article number	1173
Number of pages	14
Journal	Materials
Volume	13
Issue number	5
DOIs	https://doi.org/10.3390/ma13051173
Publication status	Published - 6 Mar 2020

OECD FOS+WOS

Research areas

CVD, Doping, Electronic structure, Few-layer graphene, Nitrogen, Phosphorus, Resistivity, LITHIUM INTERACTION, GRAPHITIC MATERIAL, SINGLE, nitrogen, doping, PARAMETERS, CARBON NANOTUBES, FILMS, electronic structure, RAY PHOTOELECTRON-SPECTROSCOPY, CHEMISTRY, MONOLAYER, few-layer graphene, PRECURSORS, phosphorus, resistivity

ID: 23802227