Standard

Electronic structure and nanoscale potential fluctuations in strongly nonstoichiometric PECVD SiOx. / Perevalov, T. V.; Volodin, V. A.; Kamaev, G. N. et al.

In: Journal of Non-Crystalline Solids, Vol. 529, 119796, 01.02.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Perevalov, TV, Volodin, VA, Kamaev, GN, Krivyakin, GK, Gritsenko, VA & Prosvirin, IP 2020, 'Electronic structure and nanoscale potential fluctuations in strongly nonstoichiometric PECVD SiOx', Journal of Non-Crystalline Solids, vol. 529, 119796. https://doi.org/10.1016/j.jnoncrysol.2019.119796

APA

Perevalov, T. V., Volodin, V. A., Kamaev, G. N., Krivyakin, G. K., Gritsenko, V. A., & Prosvirin, I. P. (2020). Electronic structure and nanoscale potential fluctuations in strongly nonstoichiometric PECVD SiOx. Journal of Non-Crystalline Solids, 529, [119796]. https://doi.org/10.1016/j.jnoncrysol.2019.119796

Vancouver

Perevalov TV, Volodin VA, Kamaev GN, Krivyakin GK, Gritsenko VA, Prosvirin IP. Electronic structure and nanoscale potential fluctuations in strongly nonstoichiometric PECVD SiOx. Journal of Non-Crystalline Solids. 2020 Feb 1;529:119796. doi: 10.1016/j.jnoncrysol.2019.119796

Author

Perevalov, T. V. ; Volodin, V. A. ; Kamaev, G. N. et al. / Electronic structure and nanoscale potential fluctuations in strongly nonstoichiometric PECVD SiOx. In: Journal of Non-Crystalline Solids. 2020 ; Vol. 529.

BibTeX

@article{cc33755a72624496bf130bc4a3c431b0,
title = "Electronic structure and nanoscale potential fluctuations in strongly nonstoichiometric PECVD SiOx",
abstract = "The electronic structures of SiOx:H films synthesized by plasma-enhanced chemical vapor deposition on silicon and glass substrates were studied. The film stoichiometric parameter x varied in the range from 0.57 to 2 depending on the oxygen supply to the reactor conditions. According to XPS, Raman scattering and high-resolution electron microscopy, a core-shell model of the a-SiOx:H structure was applied. According to this model, the films consist of silicon suboxide SiOy, in which clusters of different compositions are introduced — from amorphous silicon to silicon oxide — with a characteristic size of 2–10 nm. The SiOx:H energy diagram was constructed. The nanoscale potential fluctuations model, according to which Si nanoclusters are potential wells for electrons and holes in SiOx, is proposed. The data obtained are important for the correct interpretation of the charge transport in a-SiOx:H films, and they are important for the development of nonvolatile memory elements on their basis.",
keywords = "Dielectric, FTIR, HRTEM, PECVD, Raman scattering, SiO, XPS, RAMAN-SPECTRA, SILICON QUANTUM DOTS, AMORPHOUS SI, QUANTITATIVE-ANALYSIS, HYDROGEN, SiO2",
author = "Perevalov, {T. V.} and Volodin, {V. A.} and Kamaev, {G. N.} and Krivyakin, {G. K.} and Gritsenko, {V. A.} and Prosvirin, {I. P.}",
year = "2020",
month = feb,
day = "1",
doi = "10.1016/j.jnoncrysol.2019.119796",
language = "English",
volume = "529",
journal = "Journal of Non-Crystalline Solids",
issn = "0022-3093",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Electronic structure and nanoscale potential fluctuations in strongly nonstoichiometric PECVD SiOx

AU - Perevalov, T. V.

AU - Volodin, V. A.

AU - Kamaev, G. N.

AU - Krivyakin, G. K.

AU - Gritsenko, V. A.

AU - Prosvirin, I. P.

PY - 2020/2/1

Y1 - 2020/2/1

N2 - The electronic structures of SiOx:H films synthesized by plasma-enhanced chemical vapor deposition on silicon and glass substrates were studied. The film stoichiometric parameter x varied in the range from 0.57 to 2 depending on the oxygen supply to the reactor conditions. According to XPS, Raman scattering and high-resolution electron microscopy, a core-shell model of the a-SiOx:H structure was applied. According to this model, the films consist of silicon suboxide SiOy, in which clusters of different compositions are introduced — from amorphous silicon to silicon oxide — with a characteristic size of 2–10 nm. The SiOx:H energy diagram was constructed. The nanoscale potential fluctuations model, according to which Si nanoclusters are potential wells for electrons and holes in SiOx, is proposed. The data obtained are important for the correct interpretation of the charge transport in a-SiOx:H films, and they are important for the development of nonvolatile memory elements on their basis.

AB - The electronic structures of SiOx:H films synthesized by plasma-enhanced chemical vapor deposition on silicon and glass substrates were studied. The film stoichiometric parameter x varied in the range from 0.57 to 2 depending on the oxygen supply to the reactor conditions. According to XPS, Raman scattering and high-resolution electron microscopy, a core-shell model of the a-SiOx:H structure was applied. According to this model, the films consist of silicon suboxide SiOy, in which clusters of different compositions are introduced — from amorphous silicon to silicon oxide — with a characteristic size of 2–10 nm. The SiOx:H energy diagram was constructed. The nanoscale potential fluctuations model, according to which Si nanoclusters are potential wells for electrons and holes in SiOx, is proposed. The data obtained are important for the correct interpretation of the charge transport in a-SiOx:H films, and they are important for the development of nonvolatile memory elements on their basis.

KW - Dielectric

KW - FTIR

KW - HRTEM

KW - PECVD

KW - Raman scattering

KW - SiO

KW - XPS

KW - RAMAN-SPECTRA

KW - SILICON QUANTUM DOTS

KW - AMORPHOUS SI

KW - QUANTITATIVE-ANALYSIS

KW - HYDROGEN

KW - SiO2

UR - http://www.scopus.com/inward/record.url?scp=85076261687&partnerID=8YFLogxK

U2 - 10.1016/j.jnoncrysol.2019.119796

DO - 10.1016/j.jnoncrysol.2019.119796

M3 - Article

AN - SCOPUS:85076261687

VL - 529

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

SN - 0022-3093

M1 - 119796

ER -

ID: 22837979