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Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures. / Shklyaev, A. A.; Latyshev, A. V.

In: Applied Surface Science, Vol. 465, 28.01.2019, p. 10-14.

Research output: Contribution to journal › Article › peer-review

Harvard

Shklyaev, AA & Latyshev, AV 2019, 'Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures', Applied Surface Science, vol. 465, pp. 10-14. https://doi.org/10.1016/j.apsusc.2018.09.119

APA

Shklyaev, A. A., & Latyshev, A. V. (2019). Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures. Applied Surface Science, 465, 10-14. https://doi.org/10.1016/j.apsusc.2018.09.119

Vancouver

Shklyaev AA, Latyshev AV. Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures. Applied Surface Science. 2019 Jan 28;465:10-14. doi: 10.1016/j.apsusc.2018.09.119

Author

Shklyaev, A. A. ; Latyshev, A. V. / Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures. In: Applied Surface Science. 2019 ; Vol. 465. pp. 10-14.

BibTeX

@article{2b9af266eaa54112b86e74560f524ba4,
title = "Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures",
abstract = "The directional atom drift under direct electric current (DC) flowing through a sample is a unique tool for the surface morphology manipulation, which was previously studied in detail for Si surfaces. We show that electromigration can significantly influence the heterostructures growth process. Without electromigration, the surface morphology is formed under the action of two driving forces determined by a surface and strain energy minimization. DC shifts the balance between them in favor of one of them, depending on the DC direction, producing unusual surface nanostructures during the Ge deposition on Si(1 1 1) at 850–900 °C. When electromigration inhibits the surface energy minimization, the high atomic steps are formed. Their edges became wavy and unstable when the step edges reached the height larger than 15 nm. The instability induced disintegration of the step edges with the flat-shaped islands formation.",
keywords = "Electromigration, Ge growth on Si(1 1 1), Nanostructures, Si/Ge heterostructures, Ge growth on Si(111), INSTABILITY, SUBLIMATION, GRAPHENE, SEMICONDUCTOR SURFACES, ANISOTROPY, GERMANIUM, SILICON NANOSTRUCTURES, SIGE ISLAND FORMATION, GROWTH, SCANNING-TUNNELING-MICROSCOPY",
author = "Shklyaev, {A. A.} and Latyshev, {A. V.}",
year = "2019",
month = jan,
day = "28",
doi = "10.1016/j.apsusc.2018.09.119",
language = "English",
volume = "465",
pages = "10--14",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Electromigration effect on the surface morphology during the Ge deposition on Si(1 1 1) at high temperatures

AU - Shklyaev, A. A.

AU - Latyshev, A. V.

PY - 2019/1/28

Y1 - 2019/1/28

N2 - The directional atom drift under direct electric current (DC) flowing through a sample is a unique tool for the surface morphology manipulation, which was previously studied in detail for Si surfaces. We show that electromigration can significantly influence the heterostructures growth process. Without electromigration, the surface morphology is formed under the action of two driving forces determined by a surface and strain energy minimization. DC shifts the balance between them in favor of one of them, depending on the DC direction, producing unusual surface nanostructures during the Ge deposition on Si(1 1 1) at 850–900 °C. When electromigration inhibits the surface energy minimization, the high atomic steps are formed. Their edges became wavy and unstable when the step edges reached the height larger than 15 nm. The instability induced disintegration of the step edges with the flat-shaped islands formation.

AB - The directional atom drift under direct electric current (DC) flowing through a sample is a unique tool for the surface morphology manipulation, which was previously studied in detail for Si surfaces. We show that electromigration can significantly influence the heterostructures growth process. Without electromigration, the surface morphology is formed under the action of two driving forces determined by a surface and strain energy minimization. DC shifts the balance between them in favor of one of them, depending on the DC direction, producing unusual surface nanostructures during the Ge deposition on Si(1 1 1) at 850–900 °C. When electromigration inhibits the surface energy minimization, the high atomic steps are formed. Their edges became wavy and unstable when the step edges reached the height larger than 15 nm. The instability induced disintegration of the step edges with the flat-shaped islands formation.

KW - Electromigration

KW - Ge growth on Si(1 1 1)

KW - Nanostructures

KW - Si/Ge heterostructures

KW - Ge growth on Si(111)

KW - INSTABILITY

KW - SUBLIMATION

KW - GRAPHENE

KW - SEMICONDUCTOR SURFACES

KW - ANISOTROPY

KW - GERMANIUM

KW - SILICON NANOSTRUCTURES

KW - SIGE ISLAND FORMATION

KW - GROWTH

KW - SCANNING-TUNNELING-MICROSCOPY

UR - http://www.scopus.com/inward/record.url?scp=85053527200&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2018.09.119

DO - 10.1016/j.apsusc.2018.09.119

M3 - Article

AN - SCOPUS:85053527200

VL - 465

SP - 10

EP - 14

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -

ID: 16632320