Research output: Contribution to journal › Article › peer-review
| Translated title of the contribution | Диффузия германия из захороненного слоя SiO2 и формирование фазы SiGe |
|---|---|
| Original language | English |
| Pages (from-to) | 215-222 |
| Number of pages | 8 |
| Journal | Semiconductors |
| Volume | 56 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - Mar 2022 |
ID: 36166941