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Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase. / Tyschenko, I. E.; Khmelnitsky, R. A.; Saraykin, V. V. et al.

In: Semiconductors, Vol. 56, No. 3, 03.2022, p. 215-222.

Research output: Contribution to journal › Article › peer-review

Harvard

Tyschenko, IE, Khmelnitsky, RA, Saraykin, VV, Volodin, VA & Popov, VP 2022, 'Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase', Semiconductors, vol. 56, no. 3, pp. 215-222. https://doi.org/10.1134/S1063782622020154

APA

Tyschenko, I. E., Khmelnitsky, R. A., Saraykin, V. V., Volodin, V. A., & Popov, V. P. (2022). Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase. Semiconductors, 56(3), 215-222. https://doi.org/10.1134/S1063782622020154

Vancouver

Tyschenko IE, Khmelnitsky RA, Saraykin VV, Volodin VA, Popov VP. Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase. Semiconductors. 2022 Mar;56(3):215-222. doi: 10.1134/S1063782622020154

Author

Tyschenko, I. E. ; Khmelnitsky, R. A. ; Saraykin, V. V. et al. / Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase. In: Semiconductors. 2022 ; Vol. 56, No. 3. pp. 215-222.

BibTeX

@article{25f6a7c470774a08ad449c75b3360b8b,
title = "Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase",
abstract = "Ge diffusivity from a buried SiO2 layer of a silicon-on-insulator (SOI) structure has been studied as a function of annealing temperature. It has been shown that, at an annealing temperature lower than 900°C, almost all Ge is localized in the implantation region of the SiO2 layer. As the annealing temperature is raised to 1100°C, migration of ion-implanted Ge is accompanied by several processes: diffusion into SiO2, accumulation at Si/SiO2 interfaces, diffusion into silicon, and evaporation from silicon. At 1100°C, Ge diffuses from SiO2 to the bonding interface of the SOI structure with the diffusion coefficient of ~2 × 10−15 cm2/s, which is 2 orders of magnitude higher than its equilibrium value. Depending on the thickness of the silicon layer, formation of a Ge or SiGe phase is detected after annealing at a temperature of 1100°C.",
keywords = "diffusion, ion implantation, SiGe, silicon-on-insulator",
author = "Tyschenko, {I. E.} and Khmelnitsky, {R. A.} and Saraykin, {V. V.} and Volodin, {V. A.} and Popov, {V. P.}",
note = "Funding Information: This study was carried out under financial support of the Ministry of Education and Science of Russia (state assignment 0242-2021-0003). Publisher Copyright: {\textcopyright} 2022, Pleiades Publishing, Ltd.",
year = "2022",
month = mar,
doi = "10.1134/S1063782622020154",
language = "English",
volume = "56",
pages = "215--222",
journal = "Semiconductors",
issn = "1063-7826",
publisher = "PLEIADES PUBLISHING INC",
number = "3",

}

RIS

TY - JOUR

T1 - Diffusion of Germanium from a Buried SiO2 Layer and Formation of a SiGe Phase

AU - Tyschenko, I. E.

AU - Khmelnitsky, R. A.

AU - Saraykin, V. V.

AU - Volodin, V. A.

AU - Popov, V. P.

N1 - Funding Information: This study was carried out under financial support of the Ministry of Education and Science of Russia (state assignment 0242-2021-0003). Publisher Copyright: © 2022, Pleiades Publishing, Ltd.

PY - 2022/3

Y1 - 2022/3

N2 - Ge diffusivity from a buried SiO2 layer of a silicon-on-insulator (SOI) structure has been studied as a function of annealing temperature. It has been shown that, at an annealing temperature lower than 900°C, almost all Ge is localized in the implantation region of the SiO2 layer. As the annealing temperature is raised to 1100°C, migration of ion-implanted Ge is accompanied by several processes: diffusion into SiO2, accumulation at Si/SiO2 interfaces, diffusion into silicon, and evaporation from silicon. At 1100°C, Ge diffuses from SiO2 to the bonding interface of the SOI structure with the diffusion coefficient of ~2 × 10−15 cm2/s, which is 2 orders of magnitude higher than its equilibrium value. Depending on the thickness of the silicon layer, formation of a Ge or SiGe phase is detected after annealing at a temperature of 1100°C.

AB - Ge diffusivity from a buried SiO2 layer of a silicon-on-insulator (SOI) structure has been studied as a function of annealing temperature. It has been shown that, at an annealing temperature lower than 900°C, almost all Ge is localized in the implantation region of the SiO2 layer. As the annealing temperature is raised to 1100°C, migration of ion-implanted Ge is accompanied by several processes: diffusion into SiO2, accumulation at Si/SiO2 interfaces, diffusion into silicon, and evaporation from silicon. At 1100°C, Ge diffuses from SiO2 to the bonding interface of the SOI structure with the diffusion coefficient of ~2 × 10−15 cm2/s, which is 2 orders of magnitude higher than its equilibrium value. Depending on the thickness of the silicon layer, formation of a Ge or SiGe phase is detected after annealing at a temperature of 1100°C.

KW - diffusion

KW - ion implantation

KW - SiGe

KW - silicon-on-insulator

UR - http://www.scopus.com/inward/record.url?scp=85130232380&partnerID=8YFLogxK

UR - https://www.mendeley.com/catalogue/77054fa9-e984-3dc7-98d4-2b9f92a2426c/

U2 - 10.1134/S1063782622020154

DO - 10.1134/S1063782622020154

M3 - Article

AN - SCOPUS:85130232380

VL - 56

SP - 215

EP - 222

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 3

ER -

ID: 36166941