Research output: Contribution to journal › Article › peer-review
Determination of trap density in hafnia films produced by two atomic layer deposition techniques. / Islamov, D. R.; Gritsenko, V. A.; Lebedev, M. S.
In: Microelectronic Engineering, Vol. 178, 25.06.2017, p. 104-107.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Determination of trap density in hafnia films produced by two atomic layer deposition techniques
AU - Islamov, D. R.
AU - Gritsenko, V. A.
AU - Lebedev, M. S.
PY - 2017/6/25
Y1 - 2017/6/25
N2 - In this study, we report on the experimental determination of trap density in hafnia (HfO2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures. We show that hydrogen from the H2O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO2 films.
AB - In this study, we report on the experimental determination of trap density in hafnia (HfO2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures. We show that hydrogen from the H2O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO2 films.
KW - Atomic layer deposition
KW - Defects
KW - Hafnium oxide
KW - Oxygen vacancy
KW - DIELECTRICS
UR - http://www.scopus.com/inward/record.url?scp=85019056486&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2017.05.004
DO - 10.1016/j.mee.2017.05.004
M3 - Article
AN - SCOPUS:85019056486
VL - 178
SP - 104
EP - 107
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -
ID: 10191709