Standard

Determination of trap density in hafnia films produced by two atomic layer deposition techniques. / Islamov, D. R.; Gritsenko, V. A.; Lebedev, M. S.

в: Microelectronic Engineering, Том 178, 25.06.2017, стр. 104-107.

Результаты исследований: Научные публикации в периодических изданиях › статья › Рецензирование

Harvard

Islamov, DR, Gritsenko, VA & Lebedev, MS 2017, 'Determination of trap density in hafnia films produced by two atomic layer deposition techniques', Microelectronic Engineering, Том. 178, стр. 104-107. https://doi.org/10.1016/j.mee.2017.05.004

APA

Islamov, D. R., Gritsenko, V. A., & Lebedev, M. S. (2017). Determination of trap density in hafnia films produced by two atomic layer deposition techniques. Microelectronic Engineering, 178, 104-107. https://doi.org/10.1016/j.mee.2017.05.004

Vancouver

Islamov DR, Gritsenko VA, Lebedev MS. Determination of trap density in hafnia films produced by two atomic layer deposition techniques. Microelectronic Engineering. 2017 июнь 25;178:104-107. doi: 10.1016/j.mee.2017.05.004

Author

Islamov, D. R. ; Gritsenko, V. A. ; Lebedev, M. S. / Determination of trap density in hafnia films produced by two atomic layer deposition techniques. в: Microelectronic Engineering. 2017 ; Том 178. стр. 104-107.

BibTeX

@article{3690e23326ac4afd8ab6c1fbc86c8df6,
title = "Determination of trap density in hafnia films produced by two atomic layer deposition techniques",
abstract = "In this study, we report on the experimental determination of trap density in hafnia (HfO2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures. We show that hydrogen from the H2O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO2 films.",
keywords = "Atomic layer deposition, Defects, Hafnium oxide, Oxygen vacancy, DIELECTRICS",
author = "Islamov, {D. R.} and Gritsenko, {V. A.} and Lebedev, {M. S.}",
year = "2017",
month = jun,
day = "25",
doi = "10.1016/j.mee.2017.05.004",
language = "English",
volume = "178",
pages = "104--107",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

RIS

TY - JOUR

T1 - Determination of trap density in hafnia films produced by two atomic layer deposition techniques

AU - Islamov, D. R.

AU - Gritsenko, V. A.

AU - Lebedev, M. S.

PY - 2017/6/25

Y1 - 2017/6/25

N2 - In this study, we report on the experimental determination of trap density in hafnia (HfO2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures. We show that hydrogen from the H2O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO2 films.

AB - In this study, we report on the experimental determination of trap density in hafnia (HfO2) films produced by the atomic layer deposition technique with different precursor sets followed by annealing at various temperatures. We show that hydrogen from the H2O-precursor plays an important role in the formation and further passivation of oxygen vacancies in HfO2 films.

KW - Atomic layer deposition

KW - Defects

KW - Hafnium oxide

KW - Oxygen vacancy

KW - DIELECTRICS

UR - http://www.scopus.com/inward/record.url?scp=85019056486&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2017.05.004

DO - 10.1016/j.mee.2017.05.004

M3 - Article

AN - SCOPUS:85019056486

VL - 178

SP - 104

EP - 107

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -

ID: 10191709