Composition-sensitive growth kinetics and dispersive optical properties of thin HfxTi1−xO2 (0 ≤ x ≤ 1) films prepared by the ALD method

Original language	English
Pages (from-to)	812-823
Number of pages	12
Journal	Journal of Materials Science: Materials in Electronics
Volume	30
Issue number	1
DOIs	https://doi.org/10.1007/s10854-018-0351-z
Publication status	Published - 15 Jan 2019

ATOMIC LAYER DEPOSITION, RAY PHOTOELECTRON-SPECTROSCOPY, ELECTRONIC-STRUCTURE, ELECTRICAL-PROPERTIES, PROCESS TEMPERATURE, TITANIUM-DIOXIDE, TIO2 FILMS, GATE, SILICON, HFO2

ID: 17472434