Research output: Contribution to journal › Article › peer-review
Charge transport mechanism of high-resistive state in RRAM based on SiOx. / Gismatulin, A. A.; Kruchinin, V. N.; Gritsenko, V. A. et al.
In: Applied Physics Letters, Vol. 114, No. 3, 033503, 21.01.2019.Research output: Contribution to journal › Article › peer-review
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TY - JOUR
T1 - Charge transport mechanism of high-resistive state in RRAM based on SiOx
AU - Gismatulin, A. A.
AU - Kruchinin, V. N.
AU - Gritsenko, V. A.
AU - Prosvirin, I. P.
AU - Yen, T. J.
AU - Chin, A.
PY - 2019/1/21
Y1 - 2019/1/21
N2 - Nonstoichiometric silicon oxide SiOx is a promising material for developing a new generation of high-speed, reliable flash memory based on the resistive effect. It is necessary to understand the electron transport mechanism of the high-resistive state in SiOx to develop a resistive memory element. At present, it is generally accepted that the charge transport of the high-resistive state in the Resistive Random Access Memory (RRAM) is described by the Frenkel effect. In our work, the charge transport of the high-resistive state in RRAM based on SiOx is analyzed with two contact-limited and five volume-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling, the Frenkel model of Coulomb trap ionization, the Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of the high-resistive state in the RRAM based on SiOx. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport of the high-resistive state in the RRAM based on SiOx at temperatures above room temperature.
AB - Nonstoichiometric silicon oxide SiOx is a promising material for developing a new generation of high-speed, reliable flash memory based on the resistive effect. It is necessary to understand the electron transport mechanism of the high-resistive state in SiOx to develop a resistive memory element. At present, it is generally accepted that the charge transport of the high-resistive state in the Resistive Random Access Memory (RRAM) is described by the Frenkel effect. In our work, the charge transport of the high-resistive state in RRAM based on SiOx is analyzed with two contact-limited and five volume-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling, the Frenkel model of Coulomb trap ionization, the Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of the high-resistive state in the RRAM based on SiOx. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport of the high-resistive state in the RRAM based on SiOx at temperatures above room temperature.
KW - CONDUCTION
UR - http://www.scopus.com/inward/record.url?scp=85060598787&partnerID=8YFLogxK
U2 - 10.1063/1.5074116
DO - 10.1063/1.5074116
M3 - Article
AN - SCOPUS:85060598787
VL - 114
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 3
M1 - 033503
ER -
ID: 18485072