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Charge transport mechanism of high-resistive state in RRAM based on SiOx. / Gismatulin, A. A.; Kruchinin, V. N.; Gritsenko, V. A. et al.

In: Applied Physics Letters, Vol. 114, No. 3, 033503, 21.01.2019.

Research output: Contribution to journal › Article › peer-review

Harvard

Gismatulin, AA, Kruchinin, VN, Gritsenko, VA, Prosvirin, IP, Yen, TJ & Chin, A 2019, 'Charge transport mechanism of high-resistive state in RRAM based on SiOx', Applied Physics Letters, vol. 114, no. 3, 033503. https://doi.org/10.1063/1.5074116

APA

Gismatulin, A. A., Kruchinin, V. N., Gritsenko, V. A., Prosvirin, I. P., Yen, T. J., & Chin, A. (2019). Charge transport mechanism of high-resistive state in RRAM based on SiOx. Applied Physics Letters, 114(3), [033503]. https://doi.org/10.1063/1.5074116

Vancouver

Gismatulin AA, Kruchinin VN, Gritsenko VA, Prosvirin IP, Yen TJ, Chin A. Charge transport mechanism of high-resistive state in RRAM based on SiOx. Applied Physics Letters. 2019 Jan 21;114(3):033503. doi: 10.1063/1.5074116

Author

Gismatulin, A. A. ; Kruchinin, V. N. ; Gritsenko, V. A. et al. / Charge transport mechanism of high-resistive state in RRAM based on SiOx. In: Applied Physics Letters. 2019 ; Vol. 114, No. 3.

BibTeX

@article{81c1d8c3be554a5d98209a2dac20788e,
title = "Charge transport mechanism of high-resistive state in RRAM based on SiOx",
abstract = "Nonstoichiometric silicon oxide SiOx is a promising material for developing a new generation of high-speed, reliable flash memory based on the resistive effect. It is necessary to understand the electron transport mechanism of the high-resistive state in SiOx to develop a resistive memory element. At present, it is generally accepted that the charge transport of the high-resistive state in the Resistive Random Access Memory (RRAM) is described by the Frenkel effect. In our work, the charge transport of the high-resistive state in RRAM based on SiOx is analyzed with two contact-limited and five volume-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling, the Frenkel model of Coulomb trap ionization, the Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of the high-resistive state in the RRAM based on SiOx. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport of the high-resistive state in the RRAM based on SiOx at temperatures above room temperature.",
keywords = "CONDUCTION",
author = "Gismatulin, {A. A.} and Kruchinin, {V. N.} and Gritsenko, {V. A.} and Prosvirin, {I. P.} and Yen, {T. J.} and A. Chin",
year = "2019",
month = jan,
day = "21",
doi = "10.1063/1.5074116",
language = "English",
volume = "114",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "3",

}

RIS

TY - JOUR

T1 - Charge transport mechanism of high-resistive state in RRAM based on SiOx

AU - Gismatulin, A. A.

AU - Kruchinin, V. N.

AU - Gritsenko, V. A.

AU - Prosvirin, I. P.

AU - Yen, T. J.

AU - Chin, A.

PY - 2019/1/21

Y1 - 2019/1/21

N2 - Nonstoichiometric silicon oxide SiOx is a promising material for developing a new generation of high-speed, reliable flash memory based on the resistive effect. It is necessary to understand the electron transport mechanism of the high-resistive state in SiOx to develop a resistive memory element. At present, it is generally accepted that the charge transport of the high-resistive state in the Resistive Random Access Memory (RRAM) is described by the Frenkel effect. In our work, the charge transport of the high-resistive state in RRAM based on SiOx is analyzed with two contact-limited and five volume-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling, the Frenkel model of Coulomb trap ionization, the Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of the high-resistive state in the RRAM based on SiOx. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport of the high-resistive state in the RRAM based on SiOx at temperatures above room temperature.

AB - Nonstoichiometric silicon oxide SiOx is a promising material for developing a new generation of high-speed, reliable flash memory based on the resistive effect. It is necessary to understand the electron transport mechanism of the high-resistive state in SiOx to develop a resistive memory element. At present, it is generally accepted that the charge transport of the high-resistive state in the Resistive Random Access Memory (RRAM) is described by the Frenkel effect. In our work, the charge transport of the high-resistive state in RRAM based on SiOx is analyzed with two contact-limited and five volume-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling, the Frenkel model of Coulomb trap ionization, the Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of the high-resistive state in the RRAM based on SiOx. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport of the high-resistive state in the RRAM based on SiOx at temperatures above room temperature.

KW - CONDUCTION

UR - http://www.scopus.com/inward/record.url?scp=85060598787&partnerID=8YFLogxK

U2 - 10.1063/1.5074116

DO - 10.1063/1.5074116

M3 - Article

AN - SCOPUS:85060598787

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 033503

ER -

ID: 18485072