TY - JOUR

T1 - Charge transport mechanism of high-resistive state in RRAM based on SiOx

AU - Gismatulin, A. A.

AU - Kruchinin, V. N.

AU - Gritsenko, V. A.

AU - Prosvirin, I. P.

AU - Yen, T. J.

AU - Chin, A.

PY - 2019/1/21

Y1 - 2019/1/21

N2 - Nonstoichiometric silicon oxide SiOx is a promising material for developing a new generation of high-speed, reliable flash memory based on the resistive effect. It is necessary to understand the electron transport mechanism of the high-resistive state in SiOx to develop a resistive memory element. At present, it is generally accepted that the charge transport of the high-resistive state in the Resistive Random Access Memory (RRAM) is described by the Frenkel effect. In our work, the charge transport of the high-resistive state in RRAM based on SiOx is analyzed with two contact-limited and five volume-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling, the Frenkel model of Coulomb trap ionization, the Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of the high-resistive state in the RRAM based on SiOx. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport of the high-resistive state in the RRAM based on SiOx at temperatures above room temperature.

AB - Nonstoichiometric silicon oxide SiOx is a promising material for developing a new generation of high-speed, reliable flash memory based on the resistive effect. It is necessary to understand the electron transport mechanism of the high-resistive state in SiOx to develop a resistive memory element. At present, it is generally accepted that the charge transport of the high-resistive state in the Resistive Random Access Memory (RRAM) is described by the Frenkel effect. In our work, the charge transport of the high-resistive state in RRAM based on SiOx is analyzed with two contact-limited and five volume-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling, the Frenkel model of Coulomb trap ionization, the Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of the high-resistive state in the RRAM based on SiOx. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport of the high-resistive state in the RRAM based on SiOx at temperatures above room temperature.

KW - CONDUCTION

UR - http://www.scopus.com/inward/record.url?scp=85060598787&partnerID=8YFLogxK

U2 - 10.1063/1.5074116

DO - 10.1063/1.5074116

M3 - Article

AN - SCOPUS:85060598787

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

M1 - 033503

ER -