Charge transport mechanism of high-resistive state in RRAM based on SiOx › Research Explorer

DOI

https://doi.org/10.1063/1.5074116
Final published version

A. A. Gismatulin
V. N. Kruchinin
V. A. Gritsenko
I. P. Prosvirin
T. J. Yen
A. Chin

Original language	English
Article number	033503
Number of pages	5
Journal	Applied Physics Letters
Volume	114
Issue number	3
DOIs	https://doi.org/10.1063/1.5074116
Publication status	Published - 21 Jan 2019

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ID: 18485072