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Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure. / Gismatulin, A. A.; Orlov, Oleg M.; Gritsenko, V. A. et al.

In: Chaos, Solitons and Fractals, Vol. 142, 110458, 01.2021.

Research output: Contribution to journalArticlepeer-review

Harvard

Gismatulin, AA, Orlov, OM, Gritsenko, VA & Krasnikov, GY 2021, 'Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure', Chaos, Solitons and Fractals, vol. 142, 110458. https://doi.org/10.1016/j.chaos.2020.110458

APA

Gismatulin, A. A., Orlov, O. M., Gritsenko, V. A., & Krasnikov, G. Y. (2021). Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure. Chaos, Solitons and Fractals, 142, [110458]. https://doi.org/10.1016/j.chaos.2020.110458

Vancouver

Gismatulin AA, Orlov OM, Gritsenko VA, Krasnikov GY. Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure. Chaos, Solitons and Fractals. 2021 Jan;142:110458. Epub 2020 Nov 21. doi: 10.1016/j.chaos.2020.110458

Author

Gismatulin, A. A. ; Orlov, Oleg M. ; Gritsenko, V. A. et al. / Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure. In: Chaos, Solitons and Fractals. 2021 ; Vol. 142.

BibTeX

@article{59f9dec897fa4321b1736b248b21ed37,
title = "Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure",
abstract = "Metal-nitride-oxide-silicon structures that exhibit memristor properties were obtained using the low-pressure chemical vapor deposition at 700° C. The fabricated metal-nitride-oxide-silicon memristor structure does not require a forming procedure. In addition, the metal-nitride-oxide-silicon memristor has a memory window of about 3 orders of magnitude. In our work, the charge transport of high and low resistive states in a metal-nitride-oxide-silicon memristor is analyzed with two contact-limited models and six bulk-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling model, Frenkel model of Coulomb traps ionization, Hill-Adachi model of overlapping Coulomb traps, Shklovskii-Efros percolation model, Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of metal-nitride-oxide-silicon memristor. We found that the main charge transport mechanism in the metal-nitride-oxide-silicon memristor in a high resistive state is the model of space-charge-limited current with traps. In a low resistive state, the charge transport mechanism is described by the space-charge-limited current model with filled traps.",
keywords = "Charge transport, Endurance, Memristor, Space-charge-limited current",
author = "Gismatulin, {A. A.} and Orlov, {Oleg M.} and Gritsenko, {V. A.} and Krasnikov, {G. Ya}",
note = "Funding Information: The fabrication of experimental samples and the experiments and experimental data simulation were carried out by the grant of the Russian Foundation for Basic Research (project No. 19-29-03018 ) and with the support of Russian state research 0306-2019-0005 . Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",
year = "2021",
month = jan,
doi = "10.1016/j.chaos.2020.110458",
language = "English",
volume = "142",
journal = "Chaos, Solitons and Fractals",
issn = "0960-0779",
publisher = "Elsevier Ltd",

}

RIS

TY - JOUR

T1 - Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure

AU - Gismatulin, A. A.

AU - Orlov, Oleg M.

AU - Gritsenko, V. A.

AU - Krasnikov, G. Ya

N1 - Funding Information: The fabrication of experimental samples and the experiments and experimental data simulation were carried out by the grant of the Russian Foundation for Basic Research (project No. 19-29-03018 ) and with the support of Russian state research 0306-2019-0005 . Publisher Copyright: © 2020 Elsevier Ltd Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2021/1

Y1 - 2021/1

N2 - Metal-nitride-oxide-silicon structures that exhibit memristor properties were obtained using the low-pressure chemical vapor deposition at 700° C. The fabricated metal-nitride-oxide-silicon memristor structure does not require a forming procedure. In addition, the metal-nitride-oxide-silicon memristor has a memory window of about 3 orders of magnitude. In our work, the charge transport of high and low resistive states in a metal-nitride-oxide-silicon memristor is analyzed with two contact-limited models and six bulk-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling model, Frenkel model of Coulomb traps ionization, Hill-Adachi model of overlapping Coulomb traps, Shklovskii-Efros percolation model, Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of metal-nitride-oxide-silicon memristor. We found that the main charge transport mechanism in the metal-nitride-oxide-silicon memristor in a high resistive state is the model of space-charge-limited current with traps. In a low resistive state, the charge transport mechanism is described by the space-charge-limited current model with filled traps.

AB - Metal-nitride-oxide-silicon structures that exhibit memristor properties were obtained using the low-pressure chemical vapor deposition at 700° C. The fabricated metal-nitride-oxide-silicon memristor structure does not require a forming procedure. In addition, the metal-nitride-oxide-silicon memristor has a memory window of about 3 orders of magnitude. In our work, the charge transport of high and low resistive states in a metal-nitride-oxide-silicon memristor is analyzed with two contact-limited models and six bulk-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling model, Frenkel model of Coulomb traps ionization, Hill-Adachi model of overlapping Coulomb traps, Shklovskii-Efros percolation model, Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of metal-nitride-oxide-silicon memristor. We found that the main charge transport mechanism in the metal-nitride-oxide-silicon memristor in a high resistive state is the model of space-charge-limited current with traps. In a low resistive state, the charge transport mechanism is described by the space-charge-limited current model with filled traps.

KW - Charge transport

KW - Endurance

KW - Memristor

KW - Space-charge-limited current

UR - http://www.scopus.com/inward/record.url?scp=85096513434&partnerID=8YFLogxK

U2 - 10.1016/j.chaos.2020.110458

DO - 10.1016/j.chaos.2020.110458

M3 - Article

AN - SCOPUS:85096513434

VL - 142

JO - Chaos, Solitons and Fractals

JF - Chaos, Solitons and Fractals

SN - 0960-0779

M1 - 110458

ER -

ID: 26134216