TY - JOUR

T1 - Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure

AU - Gismatulin, A. A.

AU - Orlov, Oleg M.

AU - Gritsenko, V. A.

AU - Krasnikov, G. Ya

N1 - Funding Information: The fabrication of experimental samples and the experiments and experimental data simulation were carried out by the grant of the Russian Foundation for Basic Research (project No. 19-29-03018 ) and with the support of Russian state research 0306-2019-0005 . Publisher Copyright: © 2020 Elsevier Ltd Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2021/1

Y1 - 2021/1

N2 - Metal-nitride-oxide-silicon structures that exhibit memristor properties were obtained using the low-pressure chemical vapor deposition at 700° C. The fabricated metal-nitride-oxide-silicon memristor structure does not require a forming procedure. In addition, the metal-nitride-oxide-silicon memristor has a memory window of about 3 orders of magnitude. In our work, the charge transport of high and low resistive states in a metal-nitride-oxide-silicon memristor is analyzed with two contact-limited models and six bulk-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling model, Frenkel model of Coulomb traps ionization, Hill-Adachi model of overlapping Coulomb traps, Shklovskii-Efros percolation model, Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of metal-nitride-oxide-silicon memristor. We found that the main charge transport mechanism in the metal-nitride-oxide-silicon memristor in a high resistive state is the model of space-charge-limited current with traps. In a low resistive state, the charge transport mechanism is described by the space-charge-limited current model with filled traps.

AB - Metal-nitride-oxide-silicon structures that exhibit memristor properties were obtained using the low-pressure chemical vapor deposition at 700° C. The fabricated metal-nitride-oxide-silicon memristor structure does not require a forming procedure. In addition, the metal-nitride-oxide-silicon memristor has a memory window of about 3 orders of magnitude. In our work, the charge transport of high and low resistive states in a metal-nitride-oxide-silicon memristor is analyzed with two contact-limited models and six bulk-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling model, Frenkel model of Coulomb traps ionization, Hill-Adachi model of overlapping Coulomb traps, Shklovskii-Efros percolation model, Makram-Ebeid and Lannoo model of multiphonon isolated traps ionization and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of metal-nitride-oxide-silicon memristor. We found that the main charge transport mechanism in the metal-nitride-oxide-silicon memristor in a high resistive state is the model of space-charge-limited current with traps. In a low resistive state, the charge transport mechanism is described by the space-charge-limited current model with filled traps.

KW - Charge transport

KW - Endurance

KW - Memristor

KW - Space-charge-limited current

UR - http://www.scopus.com/inward/record.url?scp=85096513434&partnerID=8YFLogxK

U2 - 10.1016/j.chaos.2020.110458

DO - 10.1016/j.chaos.2020.110458

M3 - Article

AN - SCOPUS:85096513434

VL - 142

JO - Chaos, Solitons and Fractals

JF - Chaos, Solitons and Fractals

SN - 0960-0779

M1 - 110458

ER -