Charge transport mechanism in the metal–nitride–oxide–silicon forming-free memristor structure › Research Explorer

DOI

https://doi.org/10.1016/j.chaos.2020.110458
Final published version

A. A. Gismatulin
Oleg M. Orlov
V. A. Gritsenko
G. Ya Krasnikov

Original language	English
Article number	110458
Journal	Chaos, Solitons and Fractals
Volume	142
Early online date	21 Nov 2020
DOIs	https://doi.org/10.1016/j.chaos.2020.110458
Publication status	Published - Jan 2021

OECD FOS+WOS

1.01.PO MATHEMATICS, INTERDISCIPLINARY APPLICATIONS
1.03.UI PHYSICS, MULTIDISCIPLINARY
1.03.UB PHYSICS, APPLIED

Research areas

Charge transport, Endurance, Memristor, Space-charge-limited current

ID: 26134216