Charge transport mechanism in the metal-nitride-oxide-silicon forming-free memristor structure › Research Explorer

DOI

https://doi.org/10.1063/5.0001950
Final published version

A. A. Gismatulin
Oleg M. Orlov
V. A. Gritsenko
V. N. Kruchinin
D. S. Mizginov
G. Ya Krasnikov

Original language	English
Article number	203502
Number of pages	5
Journal	Applied Physics Letters
Volume	116
Issue number	20
DOIs	https://doi.org/10.1063/5.0001950
Publication status	Published - 18 May 2020

OECD FOS+WOS

Research areas

RESISTIVE SWITCHING CHARACTERISTICS

ID: 25687350