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Charge transport mechanism in the metal-nitride-oxide-silicon forming-free memristor structure. / Gismatulin, A. A.; Orlov, Oleg M.; Gritsenko, V. A. et al.

In: Applied Physics Letters, Vol. 116, No. 20, 203502, 18.05.2020.

Research output: Contribution to journal › Article › peer-review

Harvard

Gismatulin, AA, Orlov, OM, Gritsenko, VA, Kruchinin, VN, Mizginov, DS & Krasnikov, GY 2020, 'Charge transport mechanism in the metal-nitride-oxide-silicon forming-free memristor structure', Applied Physics Letters, vol. 116, no. 20, 203502. https://doi.org/10.1063/5.0001950

APA

Gismatulin, A. A., Orlov, O. M., Gritsenko, V. A., Kruchinin, V. N., Mizginov, D. S., & Krasnikov, G. Y. (2020). Charge transport mechanism in the metal-nitride-oxide-silicon forming-free memristor structure. Applied Physics Letters, 116(20), [203502]. https://doi.org/10.1063/5.0001950

Vancouver

Gismatulin AA, Orlov OM, Gritsenko VA, Kruchinin VN, Mizginov DS, Krasnikov GY. Charge transport mechanism in the metal-nitride-oxide-silicon forming-free memristor structure. Applied Physics Letters. 2020 May 18;116(20):203502. doi: 10.1063/5.0001950

Author

Gismatulin, A. A. ; Orlov, Oleg M. ; Gritsenko, V. A. et al. / Charge transport mechanism in the metal-nitride-oxide-silicon forming-free memristor structure. In: Applied Physics Letters. 2020 ; Vol. 116, No. 20.

BibTeX

@article{2a98720e000942d9b8796cd7acb4738b,
title = "Charge transport mechanism in the metal-nitride-oxide-silicon forming-free memristor structure",
abstract = "Silicon oxide and silicon nitride are two key dielectrics in silicon devices. The advantage of Si3N4 over other dielectrics is that silicon nitride is compatible with silicon technology. It is required to study in detail the charge transport mechanism in a Si3N4-based memristor to further improve the cell element and to create a matrix of these elements. Despite many research activities carried out, the charge transport mechanism in Si3N4-based memristors is still unclear. Metal-nitride-oxide-silicon structures that exhibit memristor properties were obtained using low-pressure chemical vapor deposition at 700 °C. The fabricated metal-nitride-oxide-silicon memristor structure does not require a forming procedure. In addition, the metal-nitride-oxide-silicon memristor has a memory window of about five orders of magnitude. We found that the main charge transport mechanism in the metal-nitride-oxide-silicon memristor in a high resistive state is the model of space-charge-limited current with traps. In a low resistive state, the charge transport mechanism is described by the space-charge-limited current model with filled traps. Trap parameters were determined in the Si3N4-based memristor in the high resistive state. ",
keywords = "RESISTIVE SWITCHING CHARACTERISTICS",
author = "Gismatulin, {A. A.} and Orlov, {Oleg M.} and Gritsenko, {V. A.} and Kruchinin, {V. N.} and Mizginov, {D. S.} and Krasnikov, {G. Ya}",
year = "2020",
month = may,
day = "18",
doi = "10.1063/5.0001950",
language = "English",
volume = "116",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "20",

}

RIS

TY - JOUR

T1 - Charge transport mechanism in the metal-nitride-oxide-silicon forming-free memristor structure

AU - Gismatulin, A. A.

AU - Orlov, Oleg M.

AU - Gritsenko, V. A.

AU - Kruchinin, V. N.

AU - Mizginov, D. S.

AU - Krasnikov, G. Ya

PY - 2020/5/18

Y1 - 2020/5/18

N2 - Silicon oxide and silicon nitride are two key dielectrics in silicon devices. The advantage of Si3N4 over other dielectrics is that silicon nitride is compatible with silicon technology. It is required to study in detail the charge transport mechanism in a Si3N4-based memristor to further improve the cell element and to create a matrix of these elements. Despite many research activities carried out, the charge transport mechanism in Si3N4-based memristors is still unclear. Metal-nitride-oxide-silicon structures that exhibit memristor properties were obtained using low-pressure chemical vapor deposition at 700 °C. The fabricated metal-nitride-oxide-silicon memristor structure does not require a forming procedure. In addition, the metal-nitride-oxide-silicon memristor has a memory window of about five orders of magnitude. We found that the main charge transport mechanism in the metal-nitride-oxide-silicon memristor in a high resistive state is the model of space-charge-limited current with traps. In a low resistive state, the charge transport mechanism is described by the space-charge-limited current model with filled traps. Trap parameters were determined in the Si3N4-based memristor in the high resistive state.

AB - Silicon oxide and silicon nitride are two key dielectrics in silicon devices. The advantage of Si3N4 over other dielectrics is that silicon nitride is compatible with silicon technology. It is required to study in detail the charge transport mechanism in a Si3N4-based memristor to further improve the cell element and to create a matrix of these elements. Despite many research activities carried out, the charge transport mechanism in Si3N4-based memristors is still unclear. Metal-nitride-oxide-silicon structures that exhibit memristor properties were obtained using low-pressure chemical vapor deposition at 700 °C. The fabricated metal-nitride-oxide-silicon memristor structure does not require a forming procedure. In addition, the metal-nitride-oxide-silicon memristor has a memory window of about five orders of magnitude. We found that the main charge transport mechanism in the metal-nitride-oxide-silicon memristor in a high resistive state is the model of space-charge-limited current with traps. In a low resistive state, the charge transport mechanism is described by the space-charge-limited current model with filled traps. Trap parameters were determined in the Si3N4-based memristor in the high resistive state.

KW - RESISTIVE SWITCHING CHARACTERISTICS

UR - http://www.scopus.com/inward/record.url?scp=85090347839&partnerID=8YFLogxK

U2 - 10.1063/5.0001950

DO - 10.1063/5.0001950

M3 - Article

AN - SCOPUS:85090347839

VL - 116

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 203502

ER -

ID: 25687350